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2SA1610-T1 |2SA1610T1NECN/a617avaiSilicon transistor


2SA1610-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 0C) TEST CONDITIONS CHARACTERISTIC SYMBOL SILICON TRAN ..
2SA1611 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC SYMBOL . . . TEST CONDITIONS Collector C ..
2SA1611 ,Silicon transistorapplications. ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) Collector to Base Voltage Vceo —60 Colle ..
2SA1611 ,Silicon transistorDATA SHEET SILICON TRANSISTOR ZSA1611 AUDIO FREQUENCY, GENERAL PURPOSE AMPLIFIER PNP SILI ..
2SA1611 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC SYMBOL . . . TEST CONDITIONS Collector C ..
2SA1611-T1 ,Silicon transistorFEATURES ' Complementary to 28C4177 0 High DC Current Gain: hFE = 200 TYP. (VCE = —6.0 V, Ic ..
2SC4478 ,High-Definition CRT Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta-- 25°C unit _Collector.to Base Voltage VCBO 400 VCollector-toEmitLer ..
2SC4480 ,NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, General Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4481 ,NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4486 ,NPN Epitaxial Planar Silicon Transistors High-Current Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4488 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4489 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..


2SA1610-T1

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