2SA1576ART1 ,General Purpose Amplifier TransistorMaximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation ..
2SA1576UB , General purpose small signal amplifier (50V, 0.15A)
2SA1577-Q , PNP Gneral Purpose Transistors
2SA1579 , High breakdown voltage.Collector-base voltage VCBO -120 V
2SA1581 , Switching Applications(with Bias Resistance)
2SA1581 , Switching Applications(with Bias Resistance)
2SC4317 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 13dB (f = 1 GHz) 21e ..
2SC4320 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 15dB (f = 1 GHz) 21e ..
2SC4321 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 13dB (f = 1 GHz) 21e ..
2SC4322 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, |S | = 7.5dB (f = 2 GHz) 21 ..
2SC4324 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, |S | = 9.5dB (f = 2 GHz) 21 ..
2SC4325 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, |S | = 7.5dB (f = 2 GHz) 21 ..
2SA1576ART1
General Purpose Amplifier Transistor
2SA1576ART1
General Purpose
Amplifier Transistors
PNP Surface Mount
Features Moisture Sensitivity Level: 1 Pb−Free Package is Available
MAXIMUM RATINGS (TA = 25°C)
THERMAL CHARACTERISTICSStresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Pulse Test: Pulse Width ≤ 300 �s, D.C. ≤ 2%.
