2SA1463 ,HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C) _
. CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDICT ..
2SA1463-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C) _
. CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDICT ..
2SA1463-T2 ,Silicon transistorFEATURES 0 High speed, high voltage switching.
4.5k 0.1 1 0 Low Collector Saturation Voltage.
. P ..
2SA1464 ,HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 °C)
T CHARACTERISTIC d SYMBOL _ k MIN. J TYP. 1 MAX. F UNIT ..
2SA1464-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
T CHARACTERISTIC d SYMBOL _ k MIN. J TYP. 1 MAX. F UNIT ..
2SA1464-T1B ,Silicon transistorFEATURES
i,
i
i
i
0.65 ttls
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Current (Ta ..
2SC4197 , Silicon NPN Epitaxial
2SC4197 , Silicon NPN Epitaxial
2SC4197 , Silicon NPN Epitaxial
2SC4204 ,NPN Epitaxial Planar Silicon Transistor High-hFE, AF Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4207 ,Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm Small package (dual type) High voltage and high current: V = 50 V, I ..
2SC4208 ,Small-signal deviceAbsolute Maximum Ratings T = 25°C+0.15a+0.2 0.45–0.10.45–0.1Parameter Symbol Rating Unit(1.27) (1. ..
2SA1463
