2SA1452 ,Silicon PNP Power Transistors TO-220Fa packageAPPLICATIONSUnit in mm11wr 1:LOW uouector 25aturat10n v Oltage 10 1 0.3 f3.2 , 0.2 2.Tt 0.2l" -1.Tr ..
2SA1452A ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH SPEED, High Current Switching ApplicationsAPPLICATIONS Unit in mmLow Collector Saturation Voltaire1010.3¢3.2:0.22.7i0.2: VCE (sat): -0.4V (Ma ..
2SA1455K , High breakdown voltage:VCEO=-120V Low noise design:NF=0.2dB(Typ.)
2SA1455K , High breakdown voltage:VCEO=-120V Low noise design:NF=0.2dB(Typ.)
2SA1461 ,HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDtttEC
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2SC4182 ,UHF/VHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDELECTRICAL CHARACTERISTICS (TA = 25 ˚C)Characteristics Symbol MIN. TYP. MAX. Unit Test ConditionsCo ..
2SC4183 ,RF AMPLIFIER FOR UHF TV TUNER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDELECTRICAL CHARACTERISTICS (TA = 25 ˚C)Characteristics Symbol MIN. TYP. MAX. Unit Test ConditionsCo ..
2SC4184 ,UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDELECTRICAL CHARACTERISTICS (TA = 25 ˚C)Characteristics Symbol MIN. TYP. MAX. Unit Test ConditionsCo ..
2SC4185 ,UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDELECTRICAL CHARACTERISTICS (TA = 25 ˚C)Characteristics Symbol MIN. TYP. MAX. Unit Test ConditionsCo ..
2SC4186 ,UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDELECTRICAL CHARACTERISTICS (TA = 25 ˚C)Characteristics Symbol MIN. TYP. MAX. Unit Test ConditionsCo ..
2SA1452
Silicon PNP Power Transistors TO-220Fa package
TOSHIBA 25A1452A
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SA'il452A
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS
Unit in mm
q Low Collector Saturation Voltage
.' VCE (sat)" -0.4V (Max.) (at IC = -6A)
a High Speed Switching Time .' tstg=1.0 ,us (Typ.)
0 Complementary to 2SC3710A
MAXIMUM RATINGS (Ta = 25°C)
0.75 1 0.1 5
CHARACTERISTIC SYMBOL RATING UNIT
2.54:0.25 2.54:0.25
Collector-Base Voltage VCBO - 80 V w
Collector-Emi; Voltage VCEO - 80 V E - c,,.,,,,-,,,,.,,- g
Emitter-Base Voltage VEBO - 6 V :2 1 2 3 :[34
Collector Current 10 - 12 A
Base Current 1B - 2 A 1 . BASE
Collector Power Dissipation PC 30 W i tifkLTEEc,T,OR
(Tc = 25°C)
J unction Temperature Tj 150 "C JEDEC -
Storage Temperature Range Tstg - 55 -- 1 50 'C EIAJ -
TOSHIBA 2-10R1A
961001EAA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
1997-12-20 1/4
TOSHIBA 25A1452A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 80V, IE = 0 - - - 10 prA
Emitter Cut-off Current IEBO VEB = - 6V, IC = 0 - - 10 ph
Collector-Emitter
Breakdown Voltage V (BR) CEO IC - - 50mA, IB - 0 - 80 - - V
hFE (1) - -
DC Current Gain (Note) VCE - - IV, IC - - IA 70 - 240
hFE (2) VCE = - IV, 1C = - 6A 40 - -
Saturation Collector-Emi; VCE (sat) IC = - 6A, IB = -0.3A - -0.2 - 0.4 V
Voltage Base-Emitter VBE (sat) 1C = - 6A, IB = - 0.3A - - 0.9 - 1.2
Transition Frequency fT VCE = - 5V, IC = - IA - 50 - MHz
Collector Output - - -
Capacitance Cob VCB - - 10V, IE - 0, f= 1MHz - 400 - pF
Turn-on Time ton 2'21415 INPUT 1% OUTPUT - 0.8 -
I132 - C}
Switching . ILF I "3
Time Storage Time tstg IBI BI - 1.0 - ps
- - VCC = - 30V
Fall Time tf -IBI =IB2=0.3A - 0.5 -
DUTY CYCLES 1%
Note : hFE (1) Classification
o : 70--140, Y : 120-240
1997-12-20 2/4
TOSHIBA
2SA1452A
IC - VCE
COMMON
EMITTER
2 Tc = 25°C
0 -2 -4 -6 -8 -10 -12 -14
COLLECTOR-EMITTER VOLTAGE VCE (V)
A VCE - IC
COMMON EMITTER
Tc = 100°C
-100 -1
COLLECTOR-EMI'I'I‘ER VOLTAGE VCE
0 -2 -4 -6 -8 - 10 - 12
COLLECTOR CURRENT 1C (A)
hFE - IC
COMMON EMITTER
300 VCE-- -1V
Tc = 100°C
DC CURRENT GAIN hFE
-0.1 -0.3 -1 -3 -10 -20
COLLECTOR CURRENT 10 (A)
COLLECTOR-EMI'I'I‘ER VOLTAGE VCE
COLLECTOR-EMI'I'I‘ER VOLTAGE VCE
COLLECTOR-EMITTER SATURATION
VOLTAGE vCE(saf.) (V)
VCE - 10
COMMON EMITTER
Tc=25°C
-50 -70 1 -1
IB = - 30mA
0 -2 -4 -6 -8 - 10 - 12
COLLECTOR CURRENT 1C (A)
VCE - 10
COMMON EMITTER
Tc= -55'C
IB---20mA
-40 -60 -80 -200 -300
-0.6 - 150
- 0.2 - 1000
- 600 - 800
0 -2 -4 -6 -8 - 10 - 12
COLLECTOR CURRENT 1C (A)
VCE(sat) - IC
COMMON EMITTER
IclIB=20
Tc = 1 00°C
-0.1 -0.3 -1 -3 -10 -20
COLLECTOR CURRENT 10 (A)
1997-12-20 3/4
TOSHIBA
2SA1452A
BASE-EMITTER SATURATION
TRANSIENT THERMAL RESISTANCE
VOLTA GE VBE(saL)
(°C/W)
10 (A)
COLLECTOR CURRENT
VBE(sat) - IC
COMMON EMITTER
-3 IC/IB=20
-0.1 -0.3 -1 -3 -10 -20
COLLECTOR CURRENT IC (A)
rth - tw
CURVES SHOULD BE APPLIED IN THERMAL
LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)
CO INFINITE HEAT SINK
C2) NO HEAT SINK
0.001 0.01 0.1 l 10 100 1000
PULSE WIDTH tw (s)
SAFE OPERATING AREA
1 l 1 1 l 1 111
IC MAX. (PULSEDWK
N 1ms)k.
10 MAX. \
-5 N h
(CONTINUOUS) \ I''"'"
- 3 I 1 l l _
DC OPERATION k
Te = 25°C
-0.5 X SINGLE NONREPETITIVE \
-0.3 PULSE Tc=25°C Ne
CURVES MUST BE DERATED h
LINEARLY WITH INCREASE N
IN TEMPERATURE. VCEO MAX.
-1 -3 -10 -30 -100
COLLECTOR-EMITTER VOLTAGE VCE (V)
10 (A)
COLLECTOR CURRENT
COLLECTOR DISSIPATION PC (W)
IC - VBE
COMMON EMITTER
VCE = - IV
Te = 100°C
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4
BASE-EMITTER VOLTAGE VBE (V)
C2 Tc=Ta
INFINITE HEAT SINK
(2) NO HEAT SINK
40 80 120 160 200 240
CASE TEMPERATURE Te (°C)
1997-12-20 4/4
www.ic-phoenix.com
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