2SA1451A ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH SPEED, High Current Switching ApplicationsAPPLICATIONS Unit in mmLow Collector Saturation Voltaire1010.3¢3.2:0.22.7i0.2: VCE (sat): -0.4V (Ma ..
2SA1452 ,Silicon PNP Power Transistors TO-220Fa packageAPPLICATIONSUnit in mm11wr 1:LOW uouector 25aturat10n v Oltage 10 1 0.3 f3.2 , 0.2 2.Tt 0.2l" -1.Tr ..
2SA1452A ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH SPEED, High Current Switching ApplicationsAPPLICATIONS Unit in mmLow Collector Saturation Voltaire1010.3¢3.2:0.22.7i0.2: VCE (sat): -0.4V (Ma ..
2SA1455K , High breakdown voltage:VCEO=-120V Low noise design:NF=0.2dB(Typ.)
2SA1455K , High breakdown voltage:VCEO=-120V Low noise design:NF=0.2dB(Typ.)
2SA1461 ,HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDtttEC
r”
ELECTRON DEVICE //////
SILICONfWTEANVSISToRM
'.ti/N1llltllf'F'1
HIGH FREQUENC ..
2SC4181A ,AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORSELECTRICAL CHARACTERISTICS (Ta LT.. 25 °C)
CHARACTERISTIC ' SYMBOL _Tritrll'T'Pr"
Collector Cut ..
2SC4181A-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta LT.. 25 °C)
CHARACTERISTIC ' SYMBOL _Tritrll'T'Pr"
Collector Cut ..
2SC4181A-T2 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta LT.. 25 °C)
CHARACTERISTIC ' SYMBOL _Tritrll'T'Pr"
Collector Cut ..
2SC4181-T1 ,Silicon transistorFEATURES
in milgTitgr: E q High DC Current Gain : hFE = 1 000 to 3 200
1.25+0.1 . Low VCE(sat) :V ..
2SC4181-T2 ,Silicon transistorDATA SHEET . l
--'-r--- -1
NEC . E . . SILICON TRANSISTORS
-er'l''o' BliiViCE 2 $6418 'll ..
2SC4182 ,UHF/VHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDELECTRICAL CHARACTERISTICS (TA = 25 ˚C)Characteristics Symbol MIN. TYP. MAX. Unit Test ConditionsCo ..
2SA1451A
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH SPEED, High Current Switching Applications
TOSHIBA 2SA1451A
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SA'ii45MA
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS Unit in mm
2.H0.2
0 Low Collector Saturation Voltage
: VCE (sat)" -0.4V (Max.) (at IC-- -6A)
0 High Speed Switching Time : tstg=1.0ps (Typ.)
5.6 MAX.
0 Complementary to 2SC3709A
MAXIMUM RATINGS (Tc=25°C)
13.0 MIN,
0.75 10.15
CHARACTERISTIC SYMBOL RATING UNIT 2.54 , 0.25 2. '
Collector-Base Voltage VCBO -60 V '/2 1 2 3 2 N
Collector-Emitter Voltage VCEO -50 V iii:--EEEI'j',':
Emitter-Base Voltage VEBO -6 V t - '0
Collector Current 10 -12 A l. BASE
Base Current 1B -2 A 2. COLLECTOR
(2,t"itpgower Dissipation PC 30 W 3. EMITTER
JEDEC -
Junction Temperature Tj 150 "C JEIT A -
Storage Temperature Range Tstg -55--150 T
TOSHIBA 2-10R1A
Weight : 1.7g (Typ.)
1 2001-10-29
TOSHIBA 2SA1451A
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 60V, IE = O - - - 10 pdk
Emitter Cut-off Current IEBO VEB = - 6V, IC = 0 - - 10 PA
Collector-Emitter
Breakdown Voltage V (BR) CEO IC - - 50mA, IB - O - 50 - - V
hFE (1) - -
DC Current Gain (Note) VCE - - IV, 10 - - IA 70 - 240
hFE (2) VCE = - IV, 10 = - 6A 40 - -
Saturation Collector-Emitter VCE (sat) IC = - 6A, IB = -0.3A - - 0.15 - 0.4 V
Voltage Base-Emitter VBE (sat) IC = - 6A, IB = -0.3A - - 0.9 - 1.2
Transition Frequency fT VCE = - 5V, IC = - IA - 70 - MHz
Collector Output - - -
Capacitance Cob VCB - - 10V, IE - o, f-- 1MHz - 320 - pF
Turn-on Time ton 2'2” INPUT 12% OUTPUT - 0.3 -
132 - cl
Switching . IBl ILF 1B1 L0
Time Storage Time tstg - 1.0 - ps
- - VCC = - 30V
Fall Time tf -1B1--IB2--0.3A - 0.2 -
DUTY CYCLES 1%
(Note) hFE(1) Classification 0 .' 70--140, Y .' 120-240
2 2001-10-29
TOSHIBA
2SA1451A
10 (A)
COLLECTOR CURRENT
COLLECTOR-EMITTER VOLTAGE VCE (V)
DC CURRENT GAIN hFE
IC - VCE
COMMON
EMITTER
Tc = 25°C
- 2 - 4 - 6 - 8 - 10 - 12 - l4
C0LLECT0R-EMITTER VOLTAGE VCE (V)
VCE - IC
COMMON EMITTER
Tc=100°C
-20 3 --50 -100-1 -
-2 -4 -6 -8 - 10 - 12
COLLECTOR CURRENT 10 (A)
hFE - IC
COMMON EMITTER
VCE = - 1V
Tc=100°C
-0.3 -1 -3 -10
COLLECTOR CURRENT 1C (A)
VCE - IC
COMMON EMITTER
Tc = 25°C
-30 -50 -70 -100 -150
COLLECTOR—EMITTER VOLTAGE VCE
0 -2 -4 -6 -8 -10 -12
COLLECTOR CURRENT IC (A)
VCE - IC
COMMON EMITTER
Tc = - 55°C
70 -100 -150 -200
COLLECTOR—EMITTER VOLTAGE VCE
0 -2 -4 -6 -8 -10 -12
COLLECTOR CURRENT 10 (A)
VCE(sat) - 10
COMMON EMITTER
-0.3 IC/IB=20
VCE
Tc = 100°C
COLLECTOR—EMITTER SATURATION
VOLTAGE
-0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT IC (A)
2001 -1 0-29
TOSHIBA
2SA1451A
BASE-EMITTER SATURATION
TRANSIENT THERMAL RESISTANCE
VOLTAGE VBE(sat) (V)
(°C/W)
10 (A)
COLLECTOR CURRENT
VBE(sat) - IC
COMMON EMITTER
-3 IC/IB=20
-0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT IC (A)
rth - tw
CURVES SHOULD BE APPLIED IN THERMAL
LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)
co INFINITE HEAT SINK
(2) NO HEAT SINK
0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw (s)
SAFE OPERATING AREA
l l l l I l Ill
1C MAX. (PULSED) X
-10 N Irns.).'f
IC MAX.
-5 (CONTINUOUS) \ \ l
-3 l l l l _ N "N,
DC OPERATION N
Tc = 25°C "it N,
.).k. SINGLE NONREPETITIVE 37,",
PULSE Tc=25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
0 1 IN TEMPERATURE. VCEO MAX.
C 1 - 3 - 10 - 30 - 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
10 (A)
COLLECTOR CURRENT
COLLECTOR DISSIPATION PC (W)
IC - VBE
COMMON EMITTER
VCE = - IV
Tc= 100°C
-0.4 -0.8 - 1.2 - 1.6 -2.0 -2.4
BASE-EMITTER VOLTAGE VBE (V)
C) Tc=Ta
INFINITE HEAT SINK
(IO NO HEAT SINK
40 80 120 160 200 240
CASE TEMPERATURE Tc (°C)
2001 -1 0-29
TOSHIBA 2SA1451A
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
5 2001-10-29
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