2SA1451 ,Silicon PNP Power Transistors TO-220Fa packageAPPLICATIONSUnit in mm11wr 1:LOW uouector 25aturat10n v Oltage 10 1 0.3 f3.2 , 0.2 2.Tt 0.2l" -1.Tr ..
2SA1451A ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH SPEED, High Current Switching ApplicationsAPPLICATIONS Unit in mmLow Collector Saturation Voltaire1010.3¢3.2:0.22.7i0.2: VCE (sat): -0.4V (Ma ..
2SA1452 ,Silicon PNP Power Transistors TO-220Fa packageAPPLICATIONSUnit in mm11wr 1:LOW uouector 25aturat10n v Oltage 10 1 0.3 f3.2 , 0.2 2.Tt 0.2l" -1.Tr ..
2SA1452A ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH SPEED, High Current Switching ApplicationsAPPLICATIONS Unit in mmLow Collector Saturation Voltaire1010.3¢3.2:0.22.7i0.2: VCE (sat): -0.4V (Ma ..
2SA1455K , High breakdown voltage:VCEO=-120V Low noise design:NF=0.2dB(Typ.)
2SA1455K , High breakdown voltage:VCEO=-120V Low noise design:NF=0.2dB(Typ.)
2SC4181A ,AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORSELECTRICAL CHARACTERISTICS (Ta LT.. 25 °C)
CHARACTERISTIC ' SYMBOL _Tritrll'T'Pr"
Collector Cut ..
2SC4181A-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta LT.. 25 °C)
CHARACTERISTIC ' SYMBOL _Tritrll'T'Pr"
Collector Cut ..
2SC4181A-T2 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta LT.. 25 °C)
CHARACTERISTIC ' SYMBOL _Tritrll'T'Pr"
Collector Cut ..
2SC4181-T1 ,Silicon transistorFEATURES
in milgTitgr: E q High DC Current Gain : hFE = 1 000 to 3 200
1.25+0.1 . Low VCE(sat) :V ..
2SC4181-T2 ,Silicon transistorDATA SHEET . l
--'-r--- -1
NEC . E . . SILICON TRANSISTORS
-er'l''o' BliiViCE 2 $6418 'll ..
2SC4182 ,UHF/VHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDELECTRICAL CHARACTERISTICS (TA = 25 ˚C)Characteristics Symbol MIN. TYP. MAX. Unit Test ConditionsCo ..
2SA1451
Silicon PNP Power Transistors TO-220Fa package
TOSHIBA
25A1451A
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SA1l451lA
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS
q Low Collector Saturation Voltage
.' VCE (sat)" -0.4V (Max.) (at IC = -6A)
q High Speed Switching Time .'
0 Complementary to 2SC3709A
MAXIMUM RATINGS (Ta = 25°C)
tstg= 1.0ps (Typ.)
INDUSTRIAL APPLICATIONS
Unit in mm
CHARACTERISTIC SYMBOL RATING UNIT 0.75 t0.1 5
Collector-Base Voltage VCBO - 60 V 2.54: 0.25 2.54 i 0.25
Co11eetor-Emitter Voltage VCEO - 50 V '/2 g N
Emitter-Base Voltage VEBO - 6 V E - “:1 tl
Collector Current 10 - 12 A 2 'l,'.
11t Currsnt D IB -2 A l. B ASE
o ector ower issipation 2. COLLECTOR
(Te = 25°C) PC 30 W 3. EMITTER
J unction Temperature Tj 150 "C JEDEC -
Storage Temperature Range Tstg - M-- 150 °C EIA J -
TOSHIBA 2-10R1A
961001EAA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
TOSHIBA 25A1451A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 60V, IE = 0 - - - 10 PA
Emitter Cut-off Current IEBO VEB = - 6V, IC = 0 - - 10 PA
Collector-Emitter
Breakdown Voltage V (BR) CEO IC - - 50mA, IB - 0 - 50 - - V
hFE (1)
= - = - 7 - 24
DC Current Gain (Note) VCE IV, IC IA 0 0
hFE (2) VCE = - IV, IC = - 6A 40 - -
Saturation Collector-Emi; VCE (sat) 1C = -6A, 1B = -0.3A - -0.15 -0.4 V
Voltage Base-Emitter VBE (sat) IC = - 6A, IB = -0.3A - -0.9 - 1.2
Transition Frequency fT VCE = - 5V, IC = - IA - 70 - MHz
Collector Output - - -
Capacitance Cob VCB - - 10V, IE - 0, f - 1MHz 320 pF
Turn-on Time ton 2'2” INPUT 12% OUTPUT - 0.3 -
1B2 - Cl
Switching . IBI ILIQ 1B1 L”
Time Storage Time tstg - 1.0 - gs
I I 0 3A VCC"-. -30V
F 11 Ti - B1: B2= . - .2 -
a 1me tf DUTY CYCLES 1% 0
(Note) hFE (1) Classification
o : 70-140, Y : 120--240
1997-12-20 2/4
TOSHIBA
25A1451A
IC - VCE
COMMON
'iii EMITTER
Tc=25°C
" B---10mA
0 -2 -4 -6 -8 -10 -12 -14
COLLECTOR-EMITTER VOLTAGE VCE (V)
A VCE - IC
COMMON EMITTER
IB---10mA Tc=100°C
-20 --50 -100 -1 -
COLLECTOR-EMI'I'I‘ER VOLTAGE VCE
0 -2 -4 -6 -8 - 10 - 12
COLLECTOR CURRENT 1C (A)
hFE - IC
COMMON EMITTER
300 VCE-- -1V
Tc =100°C
DC CURRENT GAIN hFE
-0.1 -0.3 -1 -3 - 10
COLLECTOR CURRENT 10 (A)
COLLECTOR-EMI'I'I‘ER VOLTAGE VCE
COLLECTOR—EMITTER VOLTAGE VCE
COLLECTOR-EMITTER SATURATION
VOLTAGE vCE(saf.) (V)
VCE - 10
COMMON EMITTER
Tc=25°C
-30 -50 -70 -100 -150
0 -2 -4 -6 -8 - 10 - 12
COLLECTOR CURRENT 1C (A)
VCE - 10
COMMON EMITTER
Tc---55oc
70 -100 -150 -200
0 -2 -4 -6 -8 - 10 - 12
COLLECTOR CURRENT 1C (A)
VCE(sat) - IC
COMMON EMITTER
-0.3 IC/IB=20
Te = 1 00''C
-0.1 -0.3 -1 -3 - 10
COLLECTOR CURRENT 10 (A)
1997-12-20 3/4
TOSHIBA
25A1451A
BASE-EMITTER SATURATION
TRANSIENT THERMAL RESISTANCE
VOLTAGE VBE(saL) (V)
(“C /W)
10 (A)
COLLECTOR CURRENT
VBE(sat) - IC
COMMON EMITTER
-3 IC/IB=20
-0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT IC (A)
rth - tw
CURVES SHOULD BE APPLIED IN THERMAL
LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)
C) INFINITE HEAT SINK
(23 NO HEAT SINK
0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw (s)
SAFE OPERATING AREA
-30 lllllllil
10 MAX. (PULSED) X
N lmsX
-10 ', _
10 MAX.
-5 (CONTINUOUS) . \ \
-3 l 1 l l N \ "N
DC OPERATION N l
- Tc=25°C "sis l
-0.5 k _
.yd. SINGLE NONREPETITIVE
PULSE Tc=25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
0.1 IN TEMPERATURE. VCEO MAX.
C 1 - 3 - 10 - 30 - 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
10 (A)
COLLECTOR CURRENT
COLLECTOR DISSIPATION PC (W)
IC - VBE
COMMON EMITTER
VCE = - IV
Te = 100°C
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4
BASE-EMITTER VOLTAGE VBE (V)
C? Tc=Ta
INFINITE HEAT SINK
(2) NO HEAT SINK
40 80 120 160 200 240
CASE TEMPERATURE Te (°C)
1997-12-20 4/4
www.ic-phoenix.com
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