2SA1431 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SA1434 ,PNP Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amp ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1435 ,PNP Epitaxial Planar Silicon Transistor High hFE, AF Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1435 ,PNP Epitaxial Planar Silicon Transistor High hFE, AF Amplifier ApplicationsFeatures 5.04.04.0 · Adoption of MBIT process. · High DC current gain (h =500 to 1200).FE · Large c ..
2SA1443 , PNP EPITAXIAL SILICON TRANSISTOR
2SA1443. , PNP EPITAXIAL SILICON TRANSISTOR
2SC4179 ,FM/AM RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTORFEATURES
'" ”"2"??? _ ' 0 High Gain Baniwidthvroduct.. f-r = 250 MHz TYP.
. l . 0 Low Output Ca ..
2SC4179 ,FM/AM RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C) T
CHARACTERISTIC SYMBOL m_- UNIT TESTCONDITIONS
Colle ..
2SC4179-T1 ,Silicon transistorZSC4179 _ C _ K NECmcmounevm
2SC4180 ,AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTORDATA SHEET
NEG ‘0 - _ SILICON :I'RANSISTORH
ELECTRON DEVICE
__-fee.---.-,.,,,--.-.--,,,,-, ..
2SC4180-T1 ,Silicon transistorDATA SHEET
NEG ‘0 - _ SILICON :I'RANSISTORH
ELECTRON DEVICE
__-fee.---.-,.,,,--.-.--,,,,-, ..
2SC4180-T1 ,Silicon transistorDATA SHEET
NEG ‘0 - _ SILICON :I'RANSISTORH
ELECTRON DEVICE
__-fee.---.-,.,,,--.-.--,,,,-, ..
2SA1431
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
TOSHIBA 2SA1431
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
STOROBE FLASH APPLICATIONS
MEDIUM POWER AMPLIFIER APPLICATIONS
Unit in mm
7.1MAX
0 Hi h DC Current Gain and Excellent h Linearit 3.8 2.7MAX
-gh =100--320 V - 2V I - F13 5A y -iriii2, u
. FE(1)= ( CE--- , c=-u. ) -TJ,/"
: hFE (2)=70 (Min.) (VCE= -2V, IC-- -4A) C2 g
+0.15 n-' ra'
0 Low Saturation Voltage 0.55-0_05 __Z -
: VCE (sat)" -1.0V (Max.) (10: -4A, IB= -0.IA) r-er?:, -
_ +0.15
2.54 2.54 0,45-0.05
MAXIMUM RATINGS (Ta =25°C) 1 2 3 1.0251005
CHARACTERISTIC SYMBOL RATING UNIT fiilEE)
Collector-Base Voltage VCBO -35 V
Collector-Emitter Voltage VCEO -20 V
. 1. BASE
Emitter-Base Voltage DC :EBO C,' V 2. COLLECTOR
Collector Current C - A 3. EMITTER
Pulsed(Note 1) ICP -8 JEDEC -
Base Current 1B -0.5 A JEIT A -
Collec‘tor Power Dissipation PC 1000 nolw T O SHIB A 2-7D101A
Junction Temperature Tj 150 C W . h 0 2 T
Storage Temperature Range Tstg -55--150 "C elg t . . g ( yp.)
(Note 1) .' Pulse Width=10ms(Max.), Duty Cycle=30%(Max.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 35V, IE = 0 - - - 100 nA
Emitter Cut-off Current IEBO VEB = - 8V, 1C = 0 - - - 100 nA
Collector-Emitter - -
Breakdown Voltage V (BR) CEO IC - - 10mA, 1B - 0 - 20 - - V
Emitter-Base - -
Breakdown Voltage V (BR) EBO IE - - lmA, 1C - 0 - 8 - - V
hFE (1)
V = -2V, I = -0.5A 100 - 320
DC Current Gain (Note 2) CE C
hFE (2) VCE = - 2V, IC = -4A 70 - -
Collector-Emitter - -
Saturation Voltage VCE (sat) IC - -4A, IB-- -0.1A - - - 1.0 V
Base-Emitter Voltage VBE VCE = - 2V, 1C = -4A - - - 1.5 V
Transition Frequency fT VCE = - 2V, 1C = -0.5A - 170 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = o, f = lMHz - 62 - pF
(Note 2) : hFE(1) Classification o : 100-200, Y : 160--320
1 2001-10-29
TOSHIBA
IC - VCE
2 COMMON EMITTER
V Ta=25°C
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
COMMON EMITTER
IC / IB = 40
VOLTAGE vcmw (V)
D-I 6)
COLLECTOR—EMITTER SATURATION
-0.01 -0.03 -0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT IC (A)
COLLECTOR POWER DISSIPATION
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta (T)
DC CURRENT GAIN hpE
COLLECTOR CURRENT 10 (A)
1c (A)
COLLECTOR CURRENT
2SA1431
hFE - IC
Ta = 100°C
30 COMMON EMITTER
VCE = -2V
-0.01 -0.03 -0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT IC (A)
VBE - IC
-8 //)
-4 /'s25
0 -0.4 -0.8 -1.2 -1.6 -2.0
COMMON EMITTER
VCE = - 2v
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
HIIIII ll)llllll _llll)l
.1 MAX. P L ED .).k. -
-10: C (PU S ) "=t--10msyy(
-tgtg,ucss-ehzasse. 'C,,
-1 m l rt l "til N N
m l s a mu \
DC OPERATION N sh,
(Ta=25°C) N
-0.3 N, \
-0.1 _ _
.)k. SINGLE NONREPETITIVE _
PULSE Ta=25°C
-0.03 .)K. PULSE WIDTH=10ms(MAX.)
DUTY CYCLE=30% (MAX.)
-0.01 CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
-0.03 -0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR-EMITTER VOLTAGE VCE (V)
2001 -1 0-29
TOSHIBA 2SA1431
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-10-29
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