2SA1425 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SA1431 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SA1434 ,PNP Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amp ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1435 ,PNP Epitaxial Planar Silicon Transistor High hFE, AF Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1435 ,PNP Epitaxial Planar Silicon Transistor High hFE, AF Amplifier ApplicationsFeatures 5.04.04.0 · Adoption of MBIT process. · High DC current gain (h =500 to 1200).FE · Large c ..
2SA1443 , PNP EPITAXIAL SILICON TRANSISTOR
2SC4178 ,HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 ''tp
CHARACTERISTIC SYMBOL MIN. TYP, MAX. UNIT _ TEST CONDIT ..
2SC4178-T1 ,Silicon transistorFEATURES
0 Micro package.
. High gain bandwidth product. fr = 600 MHz TYP. (IE = --1.0 mA)
. ..
2SC4179 ,FM/AM RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTORFEATURES
'" ”"2"??? _ ' 0 High Gain Baniwidthvroduct.. f-r = 250 MHz TYP.
. l . 0 Low Output Ca ..
2SC4179 ,FM/AM RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C) T
CHARACTERISTIC SYMBOL m_- UNIT TESTCONDITIONS
Colle ..
2SC4179-T1 ,Silicon transistorZSC4179 _ C _ K NECmcmounevm
2SC4180 ,AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTORDATA SHEET
NEG ‘0 - _ SILICON :I'RANSISTORH
ELECTRON DEVICE
__-fee.---.-,.,,,--.-.--,,,,-, ..
2SA1425
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS
TOSHIBA
2SA1425
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SA'ii425
POWER AMPLIFIER APPLICATIONS
Unit in mm
DRIVER STAGE AMPLIFIER APPLICATIONS
7.1MAX
3.8 2.7MAX
0 Complementary to 2SC3665. -j2ij2 . 1291....
o rifs,
MAXIMUM RATINGS (Ta = 25°C) 055313; _;: g
CHARACTERISTIC SYMBOL RATING UNIT + o 15 ' 2 3
0.45 Lid, L 0.65
Collector-Base Voltage VCBO -120 V [2511254 0451811)?
Collector-Emi; Voltage VCEO -120 V 1 2 3 10251005
Emitter-Base Voltage VEBO -5 V EEE
Collector Current IC -800 mA
Base Current IE -80 mA
. . . l. BASE
Collector Power Dissipation PC 1000 mW 2. COLLECTOR
Junction Temperature Tj 150 "C 3. EMITTER
Storage Temperature Range Tstg -55--150 "C JEDEC -
JEITA -
TOSHIBA 2-7D101A
Weight : 0.2g (Typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 120V, IE = 0 - - - 100 nA
Emitter Cut-off Current IEBO VEB = - 5V, 10 = 0 - - - 100 nA
Collector-Emitter
Breakdown Voltage V(BR)CEO IC - - 10mA, IB - 0 - 120 - - V
Emitter-Base
Breakdown Voltage V(BR)EBO IE - - lmA, IC - 0 - 5 - - V
DC Current Gain hFE VCE = - 5V, IC = - 100mA 80 - 240
(Note)
Collector-Emi;
Saturation Vol tage VCE(sat) IC - -500mA, IB-- -50mA - - - 1.0 V
Base-Emitter Voltage VBE VCE = - 5V, IC = - 500mA - - - 1.0 V
Transition Frequency fT VCE = - 5V, IC = - 100mA - 120 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = o, f = lMHz - - 40 pF
(Note) : hFE Classification
0 : 80--160, Y : 120--240
2001 -1 0-29
TOSHIBA
IC - VCE
COMMON
A EMITTER
f, Ta=25°C
v -800
-600 -
g -400 -3
j -200 IB---lmA
0 -2 -4 -6 -8 -10 -12
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
COMMON
EMITTER
IC MB-- 10
Ta = 100°C
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(Sdt) (V)
D-l :0
-3 -10 -30 -100 -300 -1000
COLLECTOR CURRENT 10 (mA)
COLLECTOR POWER DISSIPATXON
PC (W)
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta (°C)
2SA1425
hFE - IC
COMMON
E 500 EMITTER
= VCE---5ir
E 300 Ta=100°C
-3 -10 -30 -100 -300 -1000
COLLECTOR CURRENT IC (mA)
IC - VBE
COMMON
EMITTER
VCE = - 5V
-400 Ta-- 100°C 25
COLLECTOR CURRENT 10 (mA)
0 -0.2 -0.4 -0.6 -0.8 - 1.0 - 1.2
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
- IC MAX.(PULSED)kt. Irnsyd.
10msik.
Fi' -1 IC MAX.(CONTINUOUS) 100msr.T.
J? _0.5
DC OPERATIO
-0.1 Ta=25°C
IK. SINGLE NONREPETITIVE
-0.01 PULSE Ta=25°C
CURVES MUST BE DARATED
-0.005 LINEARLY WITH IN CREASE
IN TEMPERATURE.
COLLECTOR CURRENT
-0.1 -0.3 -1 -3 -10 -30 -100 -300
COLLECTOR-EMITTER VOLTAGE VCE (V)
2001 -1 0-29
TOSHIBA ZSA1425
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-10-29
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