2SA1384 ,Transistor Silicon PNP Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control ApplicationsApplications High voltage: V = −300 V, V = −300 V CBO CEO Low saturation voltage: V = −0.5 V ..
2SA1385 ,PNP SILICON EPITAXIAL TRANSISTOR MP-3FEATURES
. . Low VCE(sat) : VCE(sat) = -0.18 V TYP.
. Complement to 2SC3518-Z
QUALITY GRADE
..
2SA1385-Z ,PNP SILICON EPITAXIAL TRANSISTOR MP-3ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
VEB = -7.0 V, lc = 0
Vcs = --1.0 V, lc = -5.0 A
" " = ..
2SA1386A , Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)
2SA1386A , Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)
2SA1387 , Silicon PNP Power Transistors
2SC4149 , Switching Power Transistor(10A NPN)
2SC4151 , Switching Power Transistor(15A NPN)
2SC4151 , Switching Power Transistor(15A NPN)
2SC4152 ,Power DeviceAbsolute Maximum Ratings T = 25°CC2.54±0.3Parameter Symbol Rating Unit5.08±0.5Collector-base volta ..
2SC4152 ,Power DeviceFeatures• High-speed switchingφ 3.1±0.1• High collector-base voltage (Emitter open) VCBO• Wide safe ..
2SC4154 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SA1384
Transistor Silicon PNP Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
2SA1384 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
2SA1384 HIGH Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications High voltage: VCBO = −300 V, VCEO = −300 V Low saturation voltage: VCE (sat) = −0.5 V (max) Small collector output capacitance: Cob = 6 pF (typ.) Complementary to 2SC3515 Small flat package PC = 1.0 to 2.0 W (mounted ceramic substrate)
Maximum Ratings (Ta = 25°C) Note 1: 2SA1384 mounted on ceramic substrate (250 mm2 × 0.8 t)
Unit: mm
Weight: 0.05 g (typ.)
