2SA1382 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER, High SPEED Switching ApplicationsAPPLICATIONS l 2slglf)clfe, lHigh DC Current Gain : hFE=150--400 (IQ: -0.5A)
Low Saturation Volt ..
2SA1384 ,Transistor Silicon PNP Triple Diffused Type (PCT process) HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control ApplicationsApplications High voltage: V = −300 V, V = −300 V CBO CEO Low saturation voltage: V = −0.5 V ..
2SA1385 ,PNP SILICON EPITAXIAL TRANSISTOR MP-3FEATURES
. . Low VCE(sat) : VCE(sat) = -0.18 V TYP.
. Complement to 2SC3518-Z
QUALITY GRADE
..
2SA1385-Z ,PNP SILICON EPITAXIAL TRANSISTOR MP-3ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
VEB = -7.0 V, lc = 0
Vcs = --1.0 V, lc = -5.0 A
" " = ..
2SA1386A , Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)
2SA1386A , Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)
2SC4139 , Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
2SC4149 , Switching Power Transistor(10A NPN)
2SC4151 , Switching Power Transistor(15A NPN)
2SC4151 , Switching Power Transistor(15A NPN)
2SC4152 ,Power DeviceAbsolute Maximum Ratings T = 25°CC2.54±0.3Parameter Symbol Rating Unit5.08±0.5Collector-base volta ..
2SC4152 ,Power DeviceFeatures• High-speed switchingφ 3.1±0.1• High collector-base voltage (Emitter open) VCBO• Wide safe ..
2SA1382
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER, High SPEED Switching Applications
TOSHIBA ZSA1382
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PLANAR TYPE
ZSA1382
POWER AMPLIFIER APPLICATIONS Unit in mm
HIGH SPEED SWITCHING APPLICATIONS 5.IMAX.
0 High DC Current Gain : hFE=150--400(IC= -0.5A) g
0 Low Saturation Voltage ai
.' VCE(sat)= -0.5V(MAX.) (IC = - IA) 0.75MAX.
LOMAX. -
0 High Speed Switching : tstg=L0/zs(TYP.) 0.8MAX, Q E
MAXIMUM RATINGS (Ta =25°C) mi S'
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -50 V g
Collector-Emi; Voltage VCEO -50 V _E A
Emitter-Base Voltage VEBO -7 V F g
D I -2 *
Collector Current C C A 1. EMITTER
Peak ICP -4 2. COLLECTOR
Base Current IB - 1 A 3. BASE
Collector Power Dissipation PC 900 mW JEDEC T0'92MOD
J unction Temperature Tj 150 "C JEITA -
Storage Temperature Range Tstg -55--150 "C TOSHIBA 2-5J1A
Weight : 0.36g (Typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB= -50V, IE =0 - - -0.1 PA
Emitter Cut-off Current IEBO VEB= -7V, Ic=0 - - -0.1 PA
Collector-Emitter - -
Breakdown Voltage V(BR)CEO IC - - lOmA, IB - 0 -50 - - V
h V = -2V, I = -0.5A 150 - 400
DC Current Gain FE(1) CE C
hFE(2) VCE = -2V, 1C = - 1.5A 60 - -
Saturation Collector-Emi) VCE(sat) IC-- - IA, IB = -0.033A - -0.2 -0.5 V
Voltage Base-Emitter VBE(sat) IC= - IA, IB = -0.033A - -0.9 -1.2
Transition Frequency fT VCE = -2V, 1C = -0.5A - 110 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = 0, f = 1MHz - 50 - pF
Turn-on Time ton 20ps INPUT £12 OUTPUT - 0.2 -
Switching . l-l IB2 1B2 '
Time Storage Time tstg 1131le cc - 1.0 - ,us
-I =1 =0.033A -
Fall Time tf Jill,1, CgéLEé 1% VCC-- -30V - 0.2 -
2001 -1 0-29
TOSHIBA
2SA1382
COMMON
g EMITTER
Sir Ta = 25°C
0 - 2 - 4 - 6 - 8 - 10 - 12
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - IC
-4 -6 -8
COLLECTOR-EMITTER VOLTAGE
COMMON
EMITTER
Ta = 26''C
0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4
COLLECTOR CURRENT IC (A)
hFE - IC
Ta=100°C
a'? 300
COMMON
EMITTER
VCE=-2V
-0.01 -0.03 -0.1 -0.3 -1 -3
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE
COLLECTOR-EMI'I'I‘ER VOLTAGE
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
'L" 0.01
COMMON
EMITTER
Ta =25°C
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4
COLLECTOR CURRENT IC (A)
VCE - IC
IB=-2mA -4 -6
COMMON
EMITTER
Ta-- 100°C
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4
COLLECTOR CURRENT 10 (A)
VCE(sat) - IC
Ta-- 100°C
COMMON
EMITTER
10 /IB =30
-0.03 -0.1 -0.3 -1 -3
COLLECTOR CURRENT IC (A)
2001 -1 0-29
TOSHIBA ZSA1382
VBE(sat) - IC IC - VBE
COMMON COMMON
z -5 ?leITTE; It" EMITTER
Ces C IF
F a - 3 o VCE = - 2V
ttt C2
ie fsi. E
35 E E
'','; _ _ 1 Ta-- -55'C :5: Ta-- 100'C
iii?) g
E -0.5
U2> -0.3 .1
-0.01 -0.03 -0.1 -0.3 -1 -3 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4
COLLECTOR CURRENT IC (A) BASE-EMITTER VOLTAGE VBE (V)
PC - Ta SAF E OPERATING AREA
1000 -5 l l I I ll
IC MAX. (PULSED)y.f l100ys§<
g IC MAX.(CONTINUOUS) \ \ Olmsx
E1 800 , 1thnsy.'f
N "N N ,
35 A N tt
'ih' s N N,
e -1 _ 100ms><\ ' l
DA 600 S? N l l NI
td .w.
bit E -0.5 "N. 1s>.< N l l l l
0n? m N. l l
A, 400 ttt -0.3 l
c: ‘5 DC OPERATION . h \ \
8 o Ta=25°C "N l l l
a n: Ns \ \
j 200 Fe -0.1 h h
o O N h
o M N ,
0 g -0.05 .y.C. PULSED Ta=25°C N \
0 SINGLE NONREPETITIVE
o 40 80 120 160 200 240 -0.03 PULSE, CURVES MUST l
AMBIENT TEMPERATURE Ta CC) ('vru'hR,t'fgld1ENARLY N
TEMPERATURE. VCEO MAX.
-0.3 -1 -3 -10 -30 -100
COLLECTOR-EMITTER VOLTAGE VCE (V)
3 2001-10-29
TOSHIBA ZSA1382
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-10-29
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