2SA1360 ,Trans GP BJT PNP 150V 0.05A 3-Pin TO-126ISapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SA1360 ,Trans GP BJT PNP 150V 0.05A 3-Pin TO-126ISELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SA1362 ,TransistorApplications High DC current gain: h = 120~400 FE Low saturation voltage: V = −0.2 V (max) ..
2SA1362-GR , Low Frequency Power Amplifier Applications
2SA1362-GR , Low Frequency Power Amplifier Applications
2SA1362-Y , Low Frequency Power Amplifier Applications Power Switching Applications
2SC4105 ,NPN Triple Diffused Planar Silicon Transistor 400V/4A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4106 ,NPN Triple Diffused Planar Silicon Transistor 400V/7A Switching Regulator ApplicationsFeatures Package Dimensions · High breakdown voltage and high reliability.unit:mm · Fast switching ..
2SC4107 ,NPN Triple Diffused Planar Silicon Transistor 400V/10A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4108 ,NPN Triple Diffused Planar Silicon Transistor 400V/12A Switching Regulator ApplicationsFeatures Package Dimensions · High breakdown voltage and high reliability.unit:mm · Fast switching ..
2SC4108 ,NPN Triple Diffused Planar Silicon Transistor 400V/12A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4109 ,NPN Triple Diffused Planar Silicon Transistor 400V/16A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1360
Trans GP BJT PNP 150V 0.05A 3-Pin TO-126IS
TOSHIBA
2SA1360
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SA13ti0
AUDIO FREQUENCY AMPLIFIER APPLICATIONS
Unit in mm
8.3MAX.
l 5.8 gt 3.1:0.1
0 Complementary to 2SC3423 21 ";__" m
f "sy'?. oi g
0 Small Collector Output Capacitance : Cob=2.5pF(Typ.) D J L. x. g i
0 High Transition Frequency : fT=200MHz(Typ.) I ii. '-
MAXIMUM RATINGS (Tc = 25°C) .
1.9MAX. E
CHARACTERISTIC SYMBOL RATING UNIT (h75t0.15 'is'
Collector-Base Voltage VCBO -150 V
Collector-Emi; Voltage VCEO -150 V ,22--'0",
Emitter-Base Voltage VEBO -5 V _ , 2
-i ' ' _ E
Collector Current IC -50 mA 'C':-,'. m m p _:[;';
Base Current IB -5 mA E l. EMITTER
g?“
1ss1 a mu = o
If Te 25 C 5 JEDE C -
Junction Temperature Tj 150 C JEIT A -
Storage Temperature Range Tstg -55--150 C TOSHIB A 2-8H1A
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
Weight .' 0.82g (Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 150V, IE = 0 - - - 0.1 PA
Emitter Cut-off Current IEBO VEB = - 5V, IC = 0 - - - 0.1 PA
Collector-Emitter
Breakdown Voltage V(BR)CEO IC - - lmA, IB - 0 - 150 - - V
DC Current Gain hFE VCE = - 5V 10 = - 10mA 80 - 240
(Note) ,
Collector-Emi;
Saturation Voltage VCE(sat) IC - - 10mA, IB - - lmA - - - 1.0 V
Base-Emitter Voltage VBE VCE = - 5V, IC = - 10mA - - - 0.8 V
Transition Frequency fT VCE = - 10V, IC = - 10mA - 200 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = 0, f = 1MHz - 2.5 - pF
(Note) .' hFE Classification
0~160, Y : 120--240
2001 -1 0-29
TOSHIBA
2SA1360
COLLECTOR CURRENT
COLLECTOR CURRENT
DC CURRENT GAIN hFE
IC - VCE
COMMON
EMITTER
Tc = 25°C
IB = -0.1mA
0 -2 -4 -6 -8 -10 -12 -14 -16
COLLECTOR-EMITTER VOLTAGE VCE (V)
IC - VBE
COMMON EMITTER
VCE = - 5V
Tc = 1 00°C 25 - 25
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
BASE-EMITTER VOLTAGE VBE (V)
hFE - IC
COMMON EMITTER
300 VCE = _ 5V
Tc= 100°C
100 -25
-0.3 -1 -3 -10
COLLECTOR CURRENT IC (mA)
-30 -50
COLLECTOR-EMITTER SATURATION
TRANSITION FREQUENCY
COLLECTOR OUTPUT
CAPACITANCE cob (pF)
COLLECTOR POWER DISSIPATION
VOLTAGE VCE(sat) (V)
{T (MHz)
PC (W)
VCE(sat) - IC
COMMON EMITTER
IC / IB = 10
Te-- 100°C
-0.3 -1 -3 - 10 -30
COLLECTOR CURRENT IC (mA)
fT - IC
COMMON EMITTER
Tc = 25°C
300 VCE = - 10V
-0.5 -1 -3 -10 -30 -100
COLLECTOR CURRENT IC (mA)
Cob - VCB
f-- lMHz
Tc=25°C
-0.5 -1 -3 -10 -30 -100
COLLECTOR-BASE VOLTAGE VCB (V)
PC - Ta
(D Tc=Ta
INFINITE HEAT SINK
Q) NO HEAT SINK
O 20 40 60 80 100 120 140 160
AMBIENTTEMPERATURE Ta CC)
2001 -1 0-29
TOSHIBA ZSA1360
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-10-29
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