2SA1329 ,Trans GP BJT PNP 20V 0.03AFEATURES.. .. Low Collector Saturation VoltageI vcE(saey-x-0.hv0faar.) at 1ty---6A. High Speed Swit ..
2SA1330 ,HIGH VOLTAGE AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES
in millimeters . 7 7 7 _ VCEO = -200 V
2.83c0.2 I I . ant Gain: hFE = 90 to 450
0.65tly ..
2SA1330-T1B ,Silicon transistorFEATURES
in millimeters . 7 7 7 _ VCEO = -200 V
2.83c0.2 I I . ant Gain: hFE = 90 to 450
0.65tly ..
2SA1330-T2B ,Silicon transistorNEC ////
ELECTRON DEVICE /
-,-tlb,,----, ---,---,--,,-,-,---,------),
sii,iiiiiiiii TRANSI ..
2SA1331 ,High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1331 ,High-Speed Switching ApplicationsFeatures Package Dimensions · Fast switching speed.unit:mm · High breakdown voltage.2018A · Small-s ..
2SC4093 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLDDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4093MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC4093-T1 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLDDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4093MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC4094 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
2SC4095 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
2SC4097-R , NPN Silicon Epitaxial Transistors
2SC4097T106R , Medium Power Transistor (32V, 0.5A)
2SA1329
Trans GP BJT PNP 20V 0.03A
TOSHIBA I1yISCRETE/0PT0y Si, DEDEID'WEEEI MiF31,r:Ct] fr-
"""f i p'
9097250 TOSHIBA (DISCRETE/OPTO) Trtrtr-tr?3t9 DT-33-j7
SILICON PNP EPITAXIAL TYPE (PCT PROCESS) . 2Shl 3 2 9
Unit in mm
HIGH CURRENT SWITCHING APPLICATIONS.
10.13MAX. Aatsuzaa
FEATURES: ©
. h 7 '.il g
. Low Collector Saturation Voltage ts
t vcEtsae)ax-0.w0fax.) at Itt-6A .2
. High Speed Switching Time : tstg=1.0us(Typ.) 1 ', i
. Complementary to 2503346 I E I i I z
MAXIMUM RATINGS (Ta=25°C) 1.5MAX, I l :5
CHARACTERISTIC SYMBOL RATING UNIT _ _
Collector-Base Voltage VCBO -80 ll 2.5t 2.54 g
Collector-Emi- Voltage Vch -80 V g 'll 1 4
Emitter-Base Voltage VEBO -6 V IL-I-si-s-l
Collector Current Ic -.12 A 3
Base Current In -2 A l. BASE
a COLLECTOR (HEAT SINK;
co"ppi51rsotjv'" Dissipation PC 40 N a EMITTER
o JEDEC T0-220AB
Junction Temperature To 150 C Eh” SC-it'
Storage Temperature Range Tstg -55-150 oC TOSHIBA 2-10AIA
. 0 Mounting Kit No. A075
ELECTRICAL CHARACTERISTICS (Ta=25 C) Weight t 1.9g
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off currisnt ICBO VCB=-80V, IE=0 - - -10 pit
Emitter Cut-off Current IEBO VEB=-6V, IC=O - - -10 "
Cot1ector-Em1tter 4
=- = -80 - - v
Breakdown Voltage V(BR)CEO IC 50mA, IB 0
1mm =- a_ o - 240
DC Current Gain (Note; VCE IV, IC IA 7
hFE(2) VCE=-1V, Ic=-6A " - -
Saturation Co11ector-Emitter VCE(sat) Ic=-6tt, IB=-0.3A - -0.2 -0.4 ll
Voltage Base-Emitter VBE(sat) lc=-6A, IB---0.3A - -0.9 -1.2
Tradsition Frequency " vcty---5v, Ic---1.A - 50 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 400 - pF
Turn-on Time ton 20m INPUT IAsis OUTPUT - 0.3 -
Asa I Cl
Switching Time Storage Time tstg 1mm Bl ‘n - 1.0 - us
-IBl=IBZ=O.3A Vcc='5°V
Fall Time tf DUTY CYCLE§1% - 0.5 -
Note t hFE(1) Classification o I 70--140, Y t 120~240
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This Material Copyrighted By Its Respective Manufacturer
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2SA1329, . . '
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VCE - 10
COMMON EMITTER
T c = 25'C
COMMON
EMITTER
-50 T0: 250
/j',4',g',4f'
VCE (V)
13: -10mA
COLLECTOR CURRENT 10 (A)
o .-2 " -6 " -10 ~12 -ue
COLLE0T0R-IilMTTTWt VOLTAGE Von: (v)
VCE - "
COMMON EMITTE'R
C OLLECTOR-EMIT‘I‘ER VOLTAGE
0 " "4 -6
G OLLECTOR CURRENT
VCE - I0
H? -10
1c (A)
COMMON EMITTER
Te = 1oty'C
Von (V)
VCE (V)
COLLECTOR-EMITTER VOLTAGE
COLLECTOR-EMIT TER VOLTAGE
o -2 " -6
C OLLEOTOR C URRENT
-8 - -
To (A)
.-a " -6
COLLECTOR CURRENT
WE - Io VCE(sat) - Ic
common EMITTER f?, COMMON EMITTER
_ - H _
E . VCE- IV g -ati ro/rss---"
A Te == 100 G s'?, r;
= M r-' -a
t! M G" "
Cl H5t5 E I'
, it o -0.1
Iii I '
O 8 WI -(105
8 a f,!
o >-0.02
~01 -aa -1 -B -10 -20 _ 1 -aa -1 " -10 -20
COLLECTOR CURRENT Io (A) COLLECTOR CURRENT 10 (A)
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- 248 -
This Material Copyrighted By Its Respective Manufacturer
TOSHIBA IMiSCRETfr/0PT01 Sk, 1rElyu3Ti'iil!"I DUD?32]. 6 H I
9097250 TOSHIBA (DISCRETE/OPféb 5trC "6i3iC"rratu'rt'yiy44
28A1329
, I - ll
VBE(sat) - Ic C BE
= COMMON ELIITTER A comic? m1 TER
o I ’1 =20 ci, vos--- IV
H“ C/ B
t! ts S
(/1 ID
ti m g
b','" co
m ra .1
1 -t13 -1 -3 ~10
o ' -at, -1.2 -1.6 -ao -24
COLLECTOR CURRENT I” (A) BASE-EMITTER VOLTAGE v (v)
Po _ Ta SAFE OPERATING AREA
' . ~50
' 'ii, 60 (D Tc=Ta INFINITE HEAT SINK L inn] (Ilelglellgg yd.
o - © GooxsooxammAgHEAT SINK IC .
W 60r--- © loox‘looxzmmAeHEA'r SINK A V
= Cs) 6oxtsoxarmnAgHsaT SINK C, -10: 10 MAX.
8 © N0 HEAT SINK o .. (CONTI- N
tt 40 © H -s?. nuous) __ o N
5 0 , vi, ‘3
m I g " 39¢ t, o
Je, GO ' , g o,As + “I”
ct _ © s. g "ies. N
g N, o ex l.
t ac ' M -1 d, x k
m N o u 1 \ h
M . © "ss t t ll I
g -ges "s {g -as? .yc. SINGLE NONREPETITIVE -
, E: 10- Q "ss "s, g .. PULSE Tc=25'c " ii -
'a - - - -
g © s--A't'g o aa curwm MUST BE DERATED N, l
C9 oo 40 80 120 160 am mo ?:"53? 5fl/h""""IA" N tl
'.," AMBIENT TEMPERATURE Ta CC) E >
t -a2 I I I I I I III I ll
i, --1 -a -10 -130 -100
(20LLINTOR-EMITTh',tt VOLTAGE vcs (v)
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This Material Copyrighted By Its Respective Manufacturer
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