2SA1328 ,Trans GP BJT PNP 20V 0.03AmHIBA tIyirS(mrTE/0p'l'()+ Si, DEI‘llPHESU nn’nialb u I- __——_—_"9097250 TOSHIBA tDiSCRETE/OPTO) 56 ..
2SA1329 ,Trans GP BJT PNP 20V 0.03AFEATURES.. .. Low Collector Saturation VoltageI vcE(saey-x-0.hv0faar.) at 1ty---6A. High Speed Swit ..
2SA1330 ,HIGH VOLTAGE AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES
in millimeters . 7 7 7 _ VCEO = -200 V
2.83c0.2 I I . ant Gain: hFE = 90 to 450
0.65tly ..
2SA1330-T1B ,Silicon transistorFEATURES
in millimeters . 7 7 7 _ VCEO = -200 V
2.83c0.2 I I . ant Gain: hFE = 90 to 450
0.65tly ..
2SA1330-T2B ,Silicon transistorNEC ////
ELECTRON DEVICE /
-,-tlb,,----, ---,---,--,,-,-,---,------),
sii,iiiiiiiii TRANSI ..
2SA1331 ,High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4081T106S , General purpose transistor (50V, 0.15A)
2SC4081UB , General purpose small signal amplifier (50V, 0.15A)
2SC4093 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLDDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4093MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC4093-T1 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLDDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4093MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC4094 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
2SC4095 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
2SA1328
Trans GP BJT PNP 20V 0.03A
TOSHIBA tI)ISCREyT'ElyPT0+ Si, DED‘ID‘WESU moirii3ii, " ff
F l _ _ . _ -
9097250 TOSHIBA tDiSCRETE/OPTt0) 56C 07316 0 743347
2Shl 3 2 8 SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
. _ Unit in mm
HIGH CURRENT SWITCHING APPLICATIONS.
_ lt13MAX. ¢36102
FEATURES.. I l :5 'l a E
. Low Collector Saturation Voltage t, E
I VCE(Sat)=-0.4V(Max.) at tc----6A 2
. High Speed, m'riichisag Time , tstg=1.0us(Typ.) ' H
. Complementary to 2SC3345 l E
MAXIMUM RATINGS (Ta=25°C) l H l
CHARACTERISTIC SYMBOL RATING UNIT I ."
Collector-Base Voltage VCBO .-60 V 2-54 atid g
Collector-Emil: Voltage VCEO -50 V g Cl I _| "
.4 - 5
Emitter-Base Voltage VEBO -6 ll ' 1:2 154
Collector Current IC -12 A 23
Base Current IB -2 A L BASE
a. COLLECTOR (HEAT SINK)
Collector Power Dissipation :1 EMITTER
(T =2500) PC 40 W
c to JEDEC TO~220AB
Junction Temperature Tj 150 C EIAJ BO-i6
Storage Temperature Range Tstg -55--150 oC TOSHIBA 2--10AIA
o Mounting Kit No. A075
ELECTRICAL CHARACTERISTICS (Ta=25 C) Weight ' 1.9g
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VcB=-6011, IE=0 - - -10 ph
Emitter Cut-off Current IEBO 1lEB=-611, Ic=0 - - -10 ph
Collector-E-r - - - - -
Breakdown Voltage V(BR)CE0 1c=-50mA, IB=0 50 V
hFEU ll =-IV I =-IA 70 - 240
DC Current Gain (Note CE , C
hFE(2) VCE=-1V, IC=-6A 40 - -
Saturation Collector-End) VCE(sat) Ic=-6A, IB=-0.3A - -0.15 -0.4 V
Voltage Base-Emitter VBE(sat) Ic=-6A, IB=-O.3A " - -0.9 -1.2
Transition Frequency fa: vc/r-sv," Ic=-1A - 70 - "
Collector Output. Capacitance Cob VCB=~10V, IE=O, f=1bez - 320 - pF
Turn-on Time ton 20m: INPUT TBa OUTPUT - 0.3 -
. I132 1131
Switching Time Storage Time tstg IB tfb - 1.0 - us
-I31=132=03A 1rtw=-lsov
Fall Time tf DUTY cyans1‘7o - 0.5 -
Note t hFE(1) Classification o t 70--00, Y .. 120--240
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This Material Copyrighted By Its Respective Manufacturer
TOSHIBA f0ISCeETfiv0pToy Si, "llmo'"ie!iirl nnmam l, fl"
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I 9osziiiridiirBA (DISCRETE/(SPTO5H 5tsc. 07317 07-33%?
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. VCE- Ic
COMMON EMITTER
Tc=25'C
COMMON
EMITTER
Tc=25'C
Is (A)
f? p)'
COLLECTOR—EMITTER VOLTAGE
VCE (V)
13-”:-
COLLECTOR CURRENT
--a -6 -8 - -ua -v
O - -4 -6 -8 --10 -ua
'JOLLY/ire-KNIT') VOLTAGE VCE (V) a
COLLECTOR CURRENT Ic (A;
VCE - Ic VCE - Ic
COMMON EMITTER
COMMON EMITTER
g Tc=100'C c Tc----5tst;
a P --GB
il o cy cy g
> 4 '0 p? u? o > 'o
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l fli.S S I I g ts -tte
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J: J: -til
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Al a -
-a -t -6. --8 - ~12 -oo --a -1 -6 --8 -10 -12
COLLECTOR CURRENT IC (A) COLLECTOR CURRENT rc (a)
_ - Ic VCE(sat) - IC
= -tis
COMMON EMITTER f?, COMMON EMITTER
m 1rcs=-11r g a Ic/IB=20
' Tc=100‘C 5A
= 25 m A
< a " -a1
o -55 E g
z E o -a X000
E f'' 64
0 S a 25
o 21?: -tit5
p wil Fs
1 83 -a01
- l -t1G -1 -a --10 -tll -aa -1 -G -10
COLLECTOR CURRENT lo (A) . COLLECTOR CURRENT 10 (A)
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This Material Copyrighted By Its Respective Manufacturer
‘T‘GSHTBF tIyiScRE:TE/0PT01 Si:, DED‘HIH?ESU 00137315
'969’72ED TééH‘IBA" (DISCRETE/OPTO) Soc 07318 - t DT-33~,q
2SA1328
VBE(eat) - Ic Ic - 11BE
= come“ EMITTER A COMMON EMITTER
oes ' < Irctr-----11r
:3 Ic/IB 20 l",
Fe d H
g Cl) Pt
iii g 8
41 it a
- 1 -aa -1 --3 -10
COLLECTOR CURRENT Io (A) o "M "08 -1.a -1.6 -ao -2.4
BAtHHMITTW1 VOLTAGE VBE (v)
PC - Ta SAFE OPERATING AREA
so . -30 l l
ts] C; Tc=Ta INFINITE HEAT SINK F I I l I 'd,
U © sooxsooxzmm Ad HEAT SINK 10 MAX (PULSED)'
m so)---, a) 100x100X2mm Ad HEAT SINK N
z (1; 50x50><2mm M HEAT SINK C? -10Ho MAX , \
a ti tb N0 HEAT SINK V C.CteoNTr- N
9.. " o _ - NUOUS) l A
< H 5' v', - v'
N Q: cr - e
G H --3 a 5 t, "ks,
q, = o a F: ."
H GO W ts k
n ti I',
ii rtg) N 5 e: ' "
a N 'b
g 20 "i, g -1 I h
" _ P Fe I
g a [ll] h \
tJ IO-g,. "v., , j --tyt5- X SINGLE NONEEPETITIVE \ A
3 l g F PULSE Tc=25'c 8 -
q '(53 _ D"s s, -tltr- g ____
8 o J ‘\ CURVES MUST BE: DERATED
- mummy WITH INCREASE W‘
" BO 120 160 200 240 IN TEMPERATURE é
AMBIENT TEMPERATURE Ta (Ty) -a1 , g - , tp,,
-c1 -15 -10 -30 -100
C0LLBCTOR-tgMrTTEft VOLTAGE VCE (v)
TOSHIBA CORPORATION IlllllllllllIIIIIllllllllllllllllllllllllllIIlllIllHllllllllllIllIlllllllllllI|lIlllllllllllmIllmllIIHIllllllllllllllllllIllllllllnllIlllllllllllllllllllIfllllllllllllulllllllllllllllHlllHllllllllllllullllllll
This Material Copyrighted By Its Respective Manufacturer
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