2SA1323 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit+0.200.45–0.10Collector-base voltage ..
2SA1328 ,Trans GP BJT PNP 20V 0.03AmHIBA tIyirS(mrTE/0p'l'()+ Si, DEI‘llPHESU nn’nialb u I- __——_—_"9097250 TOSHIBA tDiSCRETE/OPTO) 56 ..
2SA1329 ,Trans GP BJT PNP 20V 0.03AFEATURES.. .. Low Collector Saturation VoltageI vcE(saey-x-0.hv0faar.) at 1ty---6A. High Speed Swit ..
2SA1330 ,HIGH VOLTAGE AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES
in millimeters . 7 7 7 _ VCEO = -200 V
2.83c0.2 I I . ant Gain: hFE = 90 to 450
0.65tly ..
2SA1330-T1B ,Silicon transistorFEATURES
in millimeters . 7 7 7 _ VCEO = -200 V
2.83c0.2 I I . ant Gain: hFE = 90 to 450
0.65tly ..
2SA1330-T2B ,Silicon transistorNEC ////
ELECTRON DEVICE /
-,-tlb,,----, ---,---,--,,-,-,---,------),
sii,iiiiiiiii TRANSI ..
2SC4081RT1 ,General Purpose Amplifier TransistorMaximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation ..
2SC4081T106R , General purpose transistor (50V, 0.15A)
2SC4081-T106R , General purpose transistor (50V, 0.15A)
2SC4081T106S , General purpose transistor (50V, 0.15A)
2SC4081UB , General purpose small signal amplifier (50V, 0.15A)
2SC4093 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLDDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4093MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SA1323
