2SA1315 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsAPPLICATIONS. I 5.1 MAX. I
ttz=c:zze,Low Collector Saturation Voltage
ZMA): VCE(sat) = -0.5V (M ..
2SA1317 ,PNP/NPN Epitaxial Planar Silicon TransistorsOrdering numbar:EN1599A'lt_ssshll 2SA1317/2SC3330PNP/ NPN Epitaxial Planar Silicon TransistorsAI? A ..
2SA1318 ,AF Amp ApplicationsOrdering number: EN 1600AMA1318/2SC3331PNP/ NPN Epitaxial Planar Silicon Tran'SistorsAl? Amp Applic ..
2SA1318S ,PNP transistor for AF amplifies applications, 60V, 0.2AFeatures. Large current capacity and wide ASO.( " 28A1318 CAbsolute Haxi-ll Ratings at Tas25oty uni ..
2SA1318-S ,PNP transistor for AF amplifies applications, 60V, 0.2AOrdering number: EN 1600AMA1318/2SC3331PNP/ NPN Epitaxial Planar Silicon Tran'SistorsAl? Amp Applic ..
2SA1318-T ,PNP transistor for AF amplifies applications, 60V, 0.2AFeatures. Large current capacity and wide ASO.( " 28A1318 CAbsolute Haxi-ll Ratings at Tas25oty uni ..
2SC4081 T106R , General purpose transistor (50V, 0.15A)
2SC4081 T106S , General purpose transistor (50V, 0.15A)
2SC4081RT1 ,General Purpose Amplifier TransistorMaximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation ..
2SC4081T106R , General purpose transistor (50V, 0.15A)
2SC4081-T106R , General purpose transistor (50V, 0.15A)
2SC4081T106S , General purpose transistor (50V, 0.15A)
2SA1315
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications
TOSHIBA
2SA1315
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SA'il3M5
POWER AMPLIFIER APPLICATIONS.
POWER SWITCHING APPLICATIONS.
0 Low Collector Saturation Voltage
.' VCE(sat) = -0.5V (Max.) (10 = - 1A)
0 High Speed Switching Time : tstg=1.0ps(Typ0
0 Complementary to 2SC3328
MAXIMUM RATINGS (Ta = 25°C)
Unit in mm
5.1 MAX.
0.75MAX.
1.0MAX, -
8.2MAX.
2.2MAX.
10 5M|N
4.1MAX.
EMITTER
2. COLLECTOR
3. BASE
TO-92MOD
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -80 V
Collector-Emitter Voltage VCEO -80 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -2 A
Base Current IB 1 A
Collector Power Dissipation PC 900 mW
J unction Temperature Tj 150 "C
Storage Temperature Range Tstg -55--150 °C
TOSHIBA
2-5J1A
Weight : 0.36g (Typ.)
2001 -1 0-29
TOSHIBA 2SA1315
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 80V, IE = 0 - - - 1.0 PA
Emitter Cut-off Current IEBO VEB = - 5V, 10 = 0 - - - 1.0 pA
Collector-Emitter
Breakdown Voltage V (BR) CEO IC - - 10mA, 1B - 0 -80 - - V
hFE (1)
= -2 I = - . A - 24
DC Current Gain (Note) VCE V, C 0 5 70 0
hFE (2) VCE = - 2V, 1C = - 1.5A 40 - -
Collector-Emi;
Saturation Voltage VCE (sat) IC - - IA, IB - - 0.05A - - 0.2 -0.5 V
Base-Emitter
Saturation Vol tage VBE (sat) IC - - IA, IB - - 0.05A - - 0.9 - 1.2 V
Transition Frequency fT VCE = - 2V, IC = - 0.5A - 80 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = 0, f = 1MHz - 45 - pF
Turn-on Time ton 'ri, INPUT 2E. OUTPUT - 0.2 -
. hi . IB2 -
itll," mg Storage Time tstg 1B1 IB2 3 - 1.0 - ps
-I =I = 0.05A -
Fall Time tf L1,lll, CgéLEé 1% VCC _ - 30V - 0.2 -
(Note) '. hFE (1)
Classification 0 .'
70--140, Y : 120--240
2001 -1 0-29
TOSHIBA
Ic (A)
COLLECTOR CURRENT
COLLECTOR-EMI'I'I‘ER VOLTAGE
DC CURRENT GAIN hFE
IC - VCE
COMMON
EMITTER
Ta = 25°C
0 - 2 - 4 - 6 - 8 - 10 - 12
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - IC
COMMON
EMITTER
Ta=100°C
IB---5mA -10 - -30 - -70
0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4
COLLECTOR CURRENT IC (A)
hFE - IC
COMMON
EMITTER
300 VCE = - 2V
Ta = 100°C
-0.01 -0.03 -0.1 -0.3 -1
COLLECTOR CURRENT IC (A)
2SA1315
VCE - IC
COMMON
EMITTER
Ta=25°C
IB-- -5mA 10 -20
COLLECTOR-EMITTER VOLTAGE
O -0.4 -0.8 -1.2 -1.6 -2.0 -2.4
COLLECTOR CURRENT IC (A)
VCE - IC
COMMON
EMITTER
Ta = - 55°C
COLLECTOR-EMITTER VOLTAGE
0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4
COLLECTOR CURRENT IC (A)
VCE(sat) - IC
COMMON
-0.5 EMITTER
IC / IB = 20
Ta = 100°C
CE(sat) (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE V
-0.01 -0.03 -0.1 -0.3 -1
COLLECTOR CURRENT IC (A)
2001 -1 0-29
TOSHIBA
2SA1315
VBE(sat) - IC
COMMON
EMITTER
IC / IB = 20
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
-0.01 -0.03 -0.1 -0.3 -1
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
-5 lllll
HC MAX.(PULSED)X I I I w w
-3 10 MAX. " lmsX
, N , , sy.4
I l N 'su, /10m:
-1 (CONTI-
NUOUS) N
\ f 100ms.)k. _-
-0.5 N
-0.3 15% N ,
- DC OPERATION k \ N)
N N q l
Ta=25°C _ N N
-0.03 "s
X SINGLE NONREPETITIVE
COLLECTOR CURRENT 10 (A)
PULSE Ta=25°C _
-0.01 CURVES MUST BE DERATED
LI EA LY ITHI EA E
-0.005 N R W NCR S
IN TEMPERATURE. V MAX.
- 0.003 CEO
-0.2 -1 -3 -10 -30 -100
COLLECTOR-EMITTER VOLTAGE VCE (V)
10 (A)
COLLECTOR CURRENT
COLLECTOR powm DISSIPATION
IC - VBE
COMMON
EMITTER
-1.6 V -
CE---2V
-0.8 Ta=100°C 25
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.6
BASE-EMITTER VOLTAGE VBE (V)
0 40 80 120 160 200 240 280
AMBIENT TEMPERATURE Ta ("0)
2001 -1 0-29
TOSHIBA ZSA1315
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
5 2001-10-29
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