2SA1314 ,Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power ApplicationsApplications High DC current gain and excellent linearity : h = 140 to 600 (V = −1 V, I = −0 ..
2SA1315 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsAPPLICATIONS. I 5.1 MAX. I
ttz=c:zze,Low Collector Saturation Voltage
ZMA): VCE(sat) = -0.5V (M ..
2SA1317 ,PNP/NPN Epitaxial Planar Silicon TransistorsOrdering numbar:EN1599A'lt_ssshll 2SA1317/2SC3330PNP/ NPN Epitaxial Planar Silicon TransistorsAI? A ..
2SA1318 ,AF Amp ApplicationsOrdering number: EN 1600AMA1318/2SC3331PNP/ NPN Epitaxial Planar Silicon Tran'SistorsAl? Amp Applic ..
2SA1318S ,PNP transistor for AF amplifies applications, 60V, 0.2AFeatures. Large current capacity and wide ASO.( " 28A1318 CAbsolute Haxi-ll Ratings at Tas25oty uni ..
2SA1318-S ,PNP transistor for AF amplifies applications, 60V, 0.2AOrdering number: EN 1600AMA1318/2SC3331PNP/ NPN Epitaxial Planar Silicon Tran'SistorsAl? Amp Applic ..
2SC4081 T106R , General purpose transistor (50V, 0.15A)
2SC4081 T106 R , General purpose transistor (50V, 0.15A)
2SC4081 T106R , General purpose transistor (50V, 0.15A)
2SC4081 T106S , General purpose transistor (50V, 0.15A)
2SC4081RT1 ,General Purpose Amplifier TransistorMaximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation ..
2SC4081T106R , General purpose transistor (50V, 0.15A)
2SA1314
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Applications
2SA1314 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1314 Strobe Flash Applications
Audio Power Applications High DC current gain and excellent linearity
: hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A)
: hFE (2) = 60 (min), 120 (typ.), (VCE = －1 V, IC = −4 A) Low saturation voltage
: VCE (sat) = −0.5 V (max) (IC = −2 A, IB = −50 mA) Small package Complementary to 2SC2982
Maximum Ratings (Ta = 25°C) Note 1: Pulse test: pulse width = 10 mS (max), duty cycle = 30% (max)
Note 2: Mounted on ceramic substrate (250 mm2 × 0.8 t)
Unit: mm
Weight: 0.05 g (typ.)
