Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications The 2SA1313 is a PNP silicon transistor manufactured by Toshiba. Here are the key specifications:

- **Type:** PNP
- **Material:** Silicon
- **Collector-Base Voltage (VCBO):** -50V
- **Collector-Emitter Voltage (VCEO):** -50V
- **Emitter-Base Voltage (VEBO):** -5V
- **Collector Current (IC):** -1.5A
- **Collector Dissipation (PC):** 1W
- **Junction Temperature (Tj):** 150°C
- **Storage Temperature (Tstg):** -55°C to +150°C
- **DC Current Gain (hFE):** 60 to 320 (depending on the specific variant)
- **Transition Frequency (fT):** 80MHz
- **Package:** TO-92MOD

These specifications are typical for the 2SA1313 transistor and are subject to variation based on operating conditions and specific manufacturing lots.

Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications The 2SA1313 is a PNP silicon transistor manufactured by DIODES. Key specifications include:

- **Type:** PNP
- **Material:** Silicon
- **Collector-Base Voltage (VCBO):** -50V
- **Collector-Emitter Voltage (VCEO):** -50V
- **Emitter-Base Voltage (VEBO):** -5V
- **Collector Current (IC):** -1.5A
- **Power Dissipation (PD):** 1W
- **DC Current Gain (hFE):** 60 to 320
- **Transition Frequency (fT):** 80MHz
- **Operating Temperature Range:** -55°C to +150°C
- **Package:** TO-92

These specifications are typical for general-purpose amplification and switching applications.