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2SA1306BTOSN/a330avaiCOMPLEMENTARY SILICON POWER TRANSISTORS


2SA1306B ,COMPLEMENTARY SILICON POWER TRANSISTORSl45E D " 9097250 DUL77‘35 T .TOSHTOSHIBA TRANSISTORSILICON PNP EPITAXIAL TYPE (PCT PROCESS)TOSHIBA ..
2SA1307 , PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)
2SA1309 ,TransistorMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SA1309 ,Transistorapplications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion ..
2SA1309 ,Transistorapplications or general electronic equipment (such as office equipment, communications equipment, m ..
2SA1309 ,Transistorapplications other than the standard
2SC4067 ,PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORSFeatures. On-chip bias resistance: Itl=0, n2=u7kn. 8ma11-a1zed package: SPA( ): PNPAbsolute Haxl-u- ..
2SC4068 ,Silicon NPN Epitaxial Planar TypeFeatures'High power gain PG_°Low noise figure NF°An S-MINI type package that allows downsizing of e ..
2SC4075 ,NPN Triple Diffused Planar Silicon Transistor Color TV Chroma Output and Audio Output ApplicationsFeatures2.83.2 · Highly resistant to breakdown and wide ASO. · Micaless package facilitating mounti ..
2SC4075 ,NPN Triple Diffused Planar Silicon Transistor Color TV Chroma Output and Audio Output ApplicationsOrdering number:EN2532NPN Triple Diffused Planar Silicon Transistor2SC4075Color TV Chroma Outputand ..
2SC4075. ,NPN Triple Diffused Planar Silicon Transistor Color TV Chroma Output and Audio Output ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4081 T106R , General purpose transistor (50V, 0.15A)


2SA1306B
COMPLEMENTARY SILICON POWER TRANSISTORS
HSE I) © 9037250 UUL??QB T EJTOSH
TOSHIBA TRANSISTOR
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
TOSHIBA (DISCRETE/OPTO)
2SA13MB
’T "jr.3- I ci
POWER AMPLIFIER APPLICATIONS.
Unit in mm
DRIVER STAGE AMPLIFIER APPLICATIONS.
105mm.
PO ga2tt12
FEATURES: t--n
J .4 O
. High Transition Frequency : fT=100MHz (Typ.) f, 7:4 2 n
. Complementary to 2SC3298B 3 A g
<0 I."
MAXIMUM RATINGS (Ta=250C) 1.2 z'
CHARACTERISTIC SYMBOL RATING UNIT +u22 E
Collector-Base 076-015 r-<
2SA1306B - -
Voltage VCBO 200 V 2.5414125 asuazs
Collector-mitter tQC2 x.
2SAI306B -2 0 “H
Voltage VCEO 0 V 'i"? u? b
. g N "
Emltter-Base Voltage VEBO -5 V C r 'll 8
Collector Current IC -1.5 -
Base Current IB -0.15 I. BASE
Collector Power Dissipation 2. COLLECTOR
a EMITTER
(Tc=25°C) PC 20 H
Junction Temperature Tj 150 oc JEDEC -
o EIAJ -
Storage Temperature Range Tstg -5rs150 C TOSHIBA 2--10LIA
Height ' 2.1g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current TCBO VCB=-160V, IE=O - - -1.0 AA
Emitter Cut-aff Current IEBO VEB----5v, Ic=0 - - -l.0 #A
Collector-Emitter
2SA1306B =- = - - -
Breakdown Voltage V(BR)CEO IC lOmA, IB 0 200 ll
DC Current Gain hFE vce--5v IC---100mA 70 - 240
(Note) '
Co11ector-Etiter - =- - - -
Saturation Voltage VCE(sat) Ic-- 500mA, IB 50mA 1.5 V
Base-Emitter Voltage VBE VCE=-5V, IC=-500mA - - -1.0 V
Transition Frequency fT vce-1ov, 1C=-100mA - 100 - MHz
Collector Output Capacitance Cob 1lcB----10V, Ic=0, f=1MHz - 30 - pF
Note , hpE Classification 0 t 70--140, Y t 120--240
HSE D © 9097250 0017799 1 EJTOSH
COLLECTOR CURRENT
DC CURRENT GAIN hpE
f1- (KHZ)
TRANSITION FRmUENCY
Ic - V03
--8 COMMON f
EMITTER U
-6 Tc=25t “
-2 -1 -6 -8 -l o - 2 - l
COLLECTOR-EMF VOLTAGE v3E (v)
hFE - Ic
COMMON EMI TTER
500 VC E=- 5 V
COLLECTOR—EMI TTER SATURATI ON
VOLTAGE
HMX)3 -03 --1
1c (A)
--(101 -003 -0.1 --3
COLLECTOR CURRENT
" - Ic
COMMON EKITTER
Iri--101r
Tc =2 "
Ic (A)
COLLECTOR CURRENT
-1CD m-1tXX)
COLLECTOR cunnznr 13 (ma)
-1 o --30
TOSHIBA (DISCRETE/OPTO)
VCE(eat) KV)
T-33--19
28A13063
Ic - VBE
o -ae -04 '06 -(18 -l.0 - - 4
BASE-EMITTER VOLTAGE VBE (v)
VCE(sat) - Ic
COMMON EMITTER
IC/IE=1 0
Ic (A)
~0035 -001 -QIIS -a1 -HI3
COLLECTOR CURRENT
SAFE OPERATING AREA
Imar.4
lOms'X
lOOmeX
Ic MAX (PULSED)X
Io MAE
(CONTINUOUS)
X SINGLE NDNREPETITIVE
PULSE Tc=25'C
CURVES IUST BE DERATED
LINEARL‘! 'ITH INCREASE
" TEMPERATURE
(30LL_-BMIrTRIt VOLTAGE VCE (v)
--3 -1 0 -30

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