2SA1304 ,Trans GP BJT PNP 150V 1.5A 3-Pin TO-220ISELECTRICAL CHARACTERISTICS (Ta =25°C) Weight : 2.1gCHARACTERISTIC SYMBOL TEST CONDITION UNITCollect ..
2SA1306 ,Silicon PNP Power Transistors TO-220Fa package
2SA1306A , isc Silicon PNP Power Transistors
2SA1306B ,COMPLEMENTARY SILICON POWER TRANSISTORSl45E D " 9097250 DUL77‘35 T .TOSHTOSHIBA TRANSISTORSILICON PNP EPITAXIAL TYPE (PCT PROCESS)TOSHIBA ..
2SA1307 , PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)
2SA1309 ,TransistorMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SC4067 ,PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORSFeatures. On-chip bias resistance: Itl=0, n2=u7kn. 8ma11-a1zed package: SPA( ): PNPAbsolute Haxl-u- ..
2SC4068 ,Silicon NPN Epitaxial Planar TypeFeatures'High power gain PG_°Low noise figure NF°An S-MINI type package that allows downsizing of e ..
2SC4075 ,NPN Triple Diffused Planar Silicon Transistor Color TV Chroma Output and Audio Output ApplicationsFeatures2.83.2 · Highly resistant to breakdown and wide ASO. · Micaless package facilitating mounti ..
2SC4075 ,NPN Triple Diffused Planar Silicon Transistor Color TV Chroma Output and Audio Output ApplicationsOrdering number:EN2532NPN Triple Diffused Planar Silicon Transistor2SC4075Color TV Chroma Outputand ..
2SC4075. ,NPN Triple Diffused Planar Silicon Transistor Color TV Chroma Output and Audio Output ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4081 T106R , General purpose transistor (50V, 0.15A)
2SA1304
Trans GP BJT PNP 150V 1.5A 3-Pin TO-220IS
TOSHIBA 2SA1304
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SA1304
POWER AMPLIFIER APPLICATIONS. Unit in mm
VERTICAL OUTPUT APPLICATIONS.
lQSMAX.
J 1.0 _ ¢32:02
o Complementary to 2SC3296. si/em 5; (il
i V , t
MAXIMUM RATINGS (Ta = 25°C) E S
CHARACTERISTIC SYMBOL RATING UNIT -’ g] 1.2 2.
Collector-Base Voltage VCBO -150 V +0.19;: ' :3
0.76 -(11 5
Collector-Emi; Voltage VCEO - 150 V 2.51yc(125 2.54%,25
Emitter-Base Voltage VEBO -5 V Ile, T h;
Collector Current IC -1.5 A l?, 2 3
Base Current IE -0.5 A L' a Ll
Collector Power Ta=25°C 2.0
Dissipation T _250C PC 20 W I. BASE
e= 2. COLLECTOR
Junction Temperature Tj 150 ''C 3. EMITTER
Storage Temperature Range Tstg -55--150 "C JEDEC -
EIAJ -
TOSHIBA 2-10L1A
ELECTRICAL CHARACTERISTICS (Ta = 25°C) Weight '. mg
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 120V, IE = 0 - - - 10 PA
Emitter Cut-off Current IEBO VEB= -5V, Ic=0 - - -10 PA
DC Current Gain hFE VCE = - 10V, IC = -500mA 40 75 140
Collector-Emi) - -
Saturation Voltage VCE(sat) IC-- -500mA, 1B - -50rnA - - -1.5 V
Base-Emitter Voltage VBE VCE= -10V, IC-- -500mA -0.65 -0.75 -0.85 V
Transition Frequency fT VCE = - 10V, IC = -500mA - 4 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = 0, f = 1MHz - 55 - pF
1 2001-05-24
TOSHIBA
IC - VCE
COMMON
EMITTER
g Te=25''C
0 - 4 - 8 - 12 - l6 - 20
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
COMMON EMITTER
D'" Tc=25°C
m g -1
tf' -0.5
ii8 0.3
rt'tet; - .
:ua 0.1
-0.01 -0.03 -0.1 -0.3 -1 -3
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE
10 (A)
COLLECTOR CURRENT
-5 I I I I I I
IC MAX.(PULSED))K.
-3 I I l I I 10msik.
IC MAX. .
(CONTINUOUS) 100 slr.
N, V\ (1s)i('
- DC OPERATION Nt
-0.5 - THERMAL LIMITED l
-0.3 ',1)
S/B LIMITED t u
l (i');
-0.1 v, "
IT. SINGLE NONREPETITIVE \
-0.05 PULSE Tc=25°C \
CURVES MUST BE DERATED l
LINEARLY WITH INCREASE
IN TEMPERATURE. VCEO MAX.
2SA1304
hFE - IC
COMMON EMITTER
VCE = - 10V
Tc = 100°C
-0.01 -0.03 -0.1 -0.3 -1 -3
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
-5 -10 -30 -100 -300
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA 2SA1304
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-05-24
www.ic-phoenix.com
.
