2SA1298 ,Transistor Silicon PNP Epitaxial (PCT process) Low Frequency Power Amplifier Application Power Switching ApplicationsApplications High DC current gain: h = 100~320 FE Low saturation voltage: V = −0.4 V (max) ..
2SA1301 , PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
2SA1301 , PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
2SA1303 , Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)
2SA1304 ,Trans GP BJT PNP 150V 1.5A 3-Pin TO-220ISELECTRICAL CHARACTERISTICS (Ta =25°C) Weight : 2.1gCHARACTERISTIC SYMBOL TEST CONDITION UNITCollect ..
2SA1306 ,Silicon PNP Power Transistors TO-220Fa package
2SC4048 ,Switching ApplicationsFeatures. On-chip bias resistance: RI=10ku,Rr--47kn. &rta11-tsiztrd package: SPA( ): ZSA156|OAbsolu ..
2SC4050 , Silicon NPN Epitaxial
2SC4050KIETR , Silicon NPN Epitaxial
2SC4050KIE-TR , Silicon NPN Epitaxial
2SC4051 , Switching Power Transistor(3A NPN)
2SC4051 , Switching Power Transistor(3A NPN)
2SA1298
Transistor Silicon PNP Epitaxial (PCT process) Low Frequency Power Amplifier Application Power Switching Applications
2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)
2SA1298 Low Frequency Power Amplifier Application
Power Switching Applications High DC current gain: hFE = 100~320 Low saturation voltage: VCE (sat) = −0.4 V (max) (IC = −500 mA, IB = −20 mA) Suitable for driver stage of small motor Complementary to 2SC3265 Small package
Maximum Ratings (Ta ��� � 25°C)
Marking Unit: mm
Weight: 0.012 g (typ.)
