2SA1293 ,Trans GP BJT PNP 80V 5A 3-Pin(3+Tab) TO-220ABAPPLICATIONSUnit in mmLow Collector Saturation Voltage I-c-i-UO-E 353.6102_ TTA._. - (\ATTIIII'A__\ ..
2SA1295 , Silicon PNP Epitaxial Planar Transistor(Audio and General)
2SA1295 , Silicon PNP Epitaxial Planar Transistor(Audio and General)
2SA1297 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Low saturation voltage: V = −0.5 V (max) @I = −2 A CE (sat) C Complementary to ..
2SA1298 ,Transistor Silicon PNP Epitaxial (PCT process) Low Frequency Power Amplifier Application Power Switching ApplicationsApplications High DC current gain: h = 100~320 FE Low saturation voltage: V = −0.4 V (max) ..
2SA1301 , PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
2SC403C , GENERAL PURPOSE
2SC4048 ,Switching ApplicationsFeatures. On-chip bias resistance: RI=10ku,Rr--47kn. &rta11-tsiztrd package: SPA( ): ZSA156|OAbsolu ..
2SC4050 , Silicon NPN Epitaxial
2SC4050KIETR , Silicon NPN Epitaxial
2SC4050KIE-TR , Silicon NPN Epitaxial
2SC4051 , Switching Power Transistor(3A NPN)
2SA1293
Trans GP BJT PNP 80V 5A 3-Pin(3+Tab) TO-220AB
TOSHIBA
2SA1293
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SA1293
HIGH CURRENT SWITCHING APPLICATIONS.
INDUSTRIAL APPLICATIONS
Unit in mm
q Low Collector Saturation Voltage 10.3MA . gfs.st0.2
: VCE(sat) = -0.4V (Max.) at IC-- -3A l Cy >4-
. . . . - 5% _-:'SI_§ si t -
o High Speed Switching Time : tstg=L0/s(Typ.) i; g _
o Complementary to 2SC3258. 'rr', I'
MAXIMUM RATINGS (Ta = 25°C) 'i ! ! ai l
as g '
CHARACTERISTIC SYMBOL RATING UNIT MAX. _ [i l
Collector-Base Voltage VCBO - 100 V I .-
Collector-Emi; Voltage VCEO -80 V 2.51 2.54 E
Emitter-Base Voltage VEBO -7 V g g Q
DC I -5 ,-i , 1 'lf 1
Collector Current P 1 IC 8 A fl - '0. Q
u se CP - 1. BASE
Collector Power Dissipation P 30 W 2. COLLECTOR(HEAT SINK)
(Tc: 25°C) C 3. EMITTER
Junction Temperature Tj 150 ''C JEDEC T0-220AB
Storage Temperature Range Tstg -55--150 "C EIAJ SC-46
TOSHIBA 2-10A1A
Mounting Kit No. AC75
ELECTRICAL CHARACTERISTICS (Ta =25°C) Weight .' 1.9g
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = - 100V, IE = 0 - - - 1 PA
Emitter Cut-off Current IEBO VEB= -7V, IC =0 - - - 1 pA
Collector-Emi; - -
Breakdown Voltage V(BR)CEO IC - - 10mA, IB - 0 -80 - - V
hFE(1)
V =-IV, I ---IA 70 - 240
DC Current Gain (Note) CE C
hFE(2) VCE = - IV, IC = -3A 30 - -
Saturation Collector-Emitter VCE(sat) IC-- -3A, IB = -0.15A - -0.2 -0.4 V
Voltage Base-Emitter VBE(sat) IC-- -3A, IB = -0.15A - -0.9 - 1.2
Transition Frequency fT VCE = -4V, IC = - IA - 60 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = 0, f = lMHz - 200 - pF
Turn-on Time ton 20ps INPUT LBS: OUTPUT - 0.2 -
Switching . r IB2 IB1 3
Time Storage Time tstg IBJLIQ - 1.0 - ,us
-I =I =0.15A a-
Fall Time tf L1,lll, ngLE§1% VCC . -30V - 0.1 -
Note : hFE(1) Classification 0 .' 70--140, Y : 120-240
TOSHIBA
Ic (A)
COLLECTOR CURRENT
COLLECTOR-EMITTER VOLTAGE
DC CURRENT GAIN hpE
IC - VCE
COMMON
EMITTER
To = 25°C
0 - 2 - 4 - 6 - 8 - 10 - l2 - l4
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - IC
COMMON I /
-0.6 l l
EMITTER
Tc=-55'C I /-100
-IB---20mA I "l 60 -80/ /
-0.4 )
I / / -14
/ / / w,,,,,,,?
-0.2 f " "
[1/ ---'"
0 ...--"
0 -1 -2 -3 -4 -5
COLLECTOR CURRENT IC (A)
hFE - IC
300 Tc=100oC
100 25
50 -55
COMMON EMITTER
5 VCE = - IV
-0.003 -0.01 -0.03 -0.1 -0.3 -1 -3
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE
COLLECTOR-EMI'I'I‘ER VOLTAGE
COLLECTOR—EMITTER SATURATION
VOLTAGE VCE(sat) (V)
2SA1293
VCE - IC
-0.8 I
COMMON I l
EMITTER -40 -60
Tc=25°C I
-0.6 I -80
1B---20mAl ) / I
/ / #0947
/ / ri,(,,',,,i,,',((i?
-0.2 //////:A/ -140
'e,:sdCssk'''
-...sss''-"'''"
00 -1 -2 -3 -4 -5
COLLECTOR CURRENT IC (A)
VCE - IC
COMMON I I I
EMITTER -40 --60
Tc=100oC I
-0.6 _
IB=-20mA / /80
0.4 / /
-v. / /
/ 'tcc)''
-0.2 I’ -140
// ed,ss:.res.tr
00 -1 -2 -3 -4 -5
COLLECTOR CURRENT 10 (A)
VCE(sat) - IC
COMMON EMITTER
1C / 13 = 20
Te = 100°C
-0.003 -0.01 -0.03 -0.1 -0.3 -1 -3
COLLECTOR CURRENT IC (A)
TOSHIBA
VBE(sat) - IC
COMMON EMITTER
-5 Ic/IB=20
Tc = - 55°C
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
-0.003 -0.01 -0.03 -0.1 -0.3 -1 -3
COLLECTOR CURRENT IC (A)
rth - tw
CURVES SHOULD BE APPLIED IN THERMAL
LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)
CD INFINITE HEAT SINK
(2) NO HEAT SINK
rth (°C / W)
TRANSIENT THERMAL RESISTANCE
0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw (s)
10 (A)
COLLECTOR CURRENT
COLLECTOR CURRENT [C (A)
2SA1293
IC - VBE
COMMON EMITTER
VCE = - IV
Tc=100°C 25 -55
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
HIHII llll llll
-10 IC MAX.(PULSED))i4 .
h l IOFSX
-5 IC MAX. (CONTINUOUS) , - 100saN
\ l l t....,..1msk.
-3 - .w.
tht A- 10msy.4
_ DC OPERATIO _ 'x, h h
Tc=25°C h
-0.5 h l
-0.3 ' N N
X SINGLE NONREPETITIVE N,
-0.1 PULSE TC=25°C
CURVES MUST BE DERATED
O 05 LINEARLY WITH INCREASE
_ . IN TEMPERATURE.
-0.3 -1 -3 -10 -30 -100
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA ZSA1293
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-05-24
:
www.loq.com
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