2SA1265 ,Trans GP BJT PNP 140V 10AUU'ILJU qullLun %GP._%.PNPeVb-0.-.re'i. .__SILICON PNPTRIPLE DIFFUSED TYPEPOWER AMPLIFIER
2SA1265N , Silicon PNP Power Transistors
2SA1265N , Silicon PNP Power Transistors
2SA1266 , SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE
2SA1271 , SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE
2SA1273 , Silicon PNP Transistor Epitaxial Planar Type(PCT PROCESS)
2SC3990 ,NPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3991 ,NPN Triple Diffused Planar Silicon Transistor NPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3995 ,Ultrahigh-Definition Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta=25°C unitCollector-to-Base Voltage VCBO _ 1500 VCollector-to-Emitter ..
2SC3996 ,Ultrahigh-Definition Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta = 25°CCollector-to-Base Voltage VCBOCollector-Lo-Emitter Voltage VCE ..
2SC3997 ,Very High-Definition Color Display Horizontal Deflection Output ApplicationsFeaturesNo.2771. High speed (tr=100ns typ). High breakdown voltage (VCBO=15°OV). High reliability ( ..
2SC3998 ,Very High-Definition Color Display Horizontal Deflection Output ApplicationsNo.2732
2SA1265
Trans GP BJT PNP 140V 10A
UuaiLJU IVUIILun N6-r.b%..r-e..r-...-re-. ._.
-._ - - ' - '
SILICON PNPTRIPLE DIFFUSED TYPE _ 2Shl 2 6 5
POWER AMPLIFIER APPLICATIONS. Unit in mm
1&9MAX. ffaacea2
FEATURES: 8 3 .3
' Complementary to 2803182 -,
. Recommend for 70il High Fidelity P . ((, E)----- g
Audio Frequency Amplifier Output Stage 3 j, .-_.- - 3
© o tD N
. i _ ll c5
acres tf
1.0-tlats
MAXIMUM RATINGS (Ta=25°C) . aitiht12 545i02 "
CHARACTERISTIC SYMBOL RATING UNIT 3 'ti' 00 g
d e' xi
Collector-Base Volta e ll -140 m d
g CBO A --'r,-,
Co11eetor-Emitter Voltage VCEO -140 ll f
Emitter-Base Voltage VEBO -5 V L BASE
Collector Current Ic -10 A a COLLECTOR (HEAT SINK)
. IS EMITTER
Base Current IB -1 A JEDEC -
Collector gower Dissipation PC 100 W EIAJ -
(Tc=25 C) .
. o TOSHIBA a-16BIA
Junction Temperature Ti 150 / Weight I 4.6g
Storage Temperature Range Tsta -55“'150 C
ELECTRICAL CHARACTERISTICS (Ta=25oc)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO var-x-LUN, IE=O - - -5.0 PA
Emitter Cut-off Current IEBO VEB=-5V, Ic=0 - - -5.0 PA
Collector-Emi)
=- = -140 - - V
Breakdown Voltage V(BR)CEO rc 50mh, IB 0
1lcE=-5il, Ity-s-lit 55 - 160
DC Current Gain (Note;
hFE(2) llcE=-5V, Ic=-5A 35 83 -
Collector-Emitter - - - - -
Saturation Voltage VCE(Sat) Ic--" M, 1Bx'-0.7A 0.8 2.0 ll
Base-Ehdtter Voltage VBE VCE=-5V, Ity=-5A - -1.0 -1.5 ll
Transition Frequency fT VCE=-5V, Ic=-1A - 30 - MHz
Collector Output Capacitance Cob 1lcB=-10V, IE=0, f=lMHz - 480 - pF
Note I hFE(1) Classification R t 55-110, 0 t 80--160
lllllllllllllIlllIIIlllllllllllllllIlll||IIIIIIIIIHIIllllllllillllll|ll|IHIIIIHIIIIIIllllIllIIHIHIlllllll|HlllllllllllllllllllIllIlllllllllllllllllllllllllllllflll|llfllllllllillllllll|llllllllllHlllllllHllllllll TUB HIBA CORP ORATION
ZSA1265
Io - VCE
I0 (A)
-ao common
EMITTER
Tc = zs'C
I =-lOmA
COLLECTOR CURRENT
o -2 -4 -6 --8 -10 -1a
C0L'Mli2WcR-liWrTTER VOLTAGE Ircs (V)
hFE _ I0
COMMON EMITTER
tl 500 VCE=-5V
GOO Tc=1oo'c
-th01 4103 --t11 --a3 -1 --3 -10
COLLECTOR CURRENT lo (A)
A fT _ IC
g common EMITTER
V Tc=25'C
s- Ircs=-51r
4.01 -ti03 ~01 -i13 -1 -3 -10
COLLECTOR CURRENT Ito (A)
LEG TOR—EMI TTER SATURAT ION
I0 - VBE
C? COMMON
V EMITTER
f? von-----)
o -t14 -08 ~12 --1.6 -2.0 -2.6
BAtuh-EMITTWt VOLTAGE VBE (v)
VCE(sa.c) _ IC
COMMON EMITTER
C" -3 Ic/'IB=10
a -tlti
E3 C05
> -i10G
-001 -003 -tll -03 --1 .-3 -10
COLLECTOR CURRENT 10 (A)
SAFE OPERATING AREA
-50 ITtiITlI-l [J_LLIII inn I 11
C? --30. I.0. YH.. (PULSEDM I lms '
V , I lOmes:
340 lo MAX.(CONTJN000s) I "100imsst,
--5 C}, o;
" ot ,
-G 90:22:;
l OJ xt:,
L . Jr N l
' S INOLE tl0NRBPE'1lrTrNrIg
COLLEC TOR CURREN ’1‘
~05} PULSE Tc=25'C s', E E:
-t13-tHJmngs MUST BE DERATED s' P, 'T
- LINEARLY WITH INCREASE 3 -i-
Ill TEMPERATURE >
-tll J_._Lu n J IIIIII I n t
-02 -1 --G -10 -00 -100 4100
(30Lu(TOR-EMITTWt VOLTAGE VCE (v)
TDBHI BA CORPU NATION Ill|llllll|IHHHI|llll|l|lHlllllflllllllIllllllHI|||Illlllll|lllllllllllllllllll||lllllll|||llll|llllllll|IHII|llllllll|Illl||lllllllllllllllllHlllllllllllllHlllll|H||l|llllllllIHI|IllIHIlllllllllllllllllllllll
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