2SA1258 ,60V/3A for High-Speed Drivers ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1261 , PNP EPITAXIAL SILICON TRANSISTOR
2SA1263N , Silicon PNP Power Transistors
2SA1264 ,Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220FEATURES'.. Complementary to ZSC3181. Recommend for 55H High Fidelity Audio FrequencyAmplifier Outp ..
2SA1264N , Silicon PNP Power Transistors
2SA1265 ,Trans GP BJT PNP 140V 10AUU'ILJU qullLun %GP._%.PNPeVb-0.-.re'i. .__SILICON PNPTRIPLE DIFFUSED TYPEPOWER AMPLIFIER
2SC3971A ,Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)Absolute Maximum Ratings (T =25˚C)n – +0.2C0.5 –0.10.8– 0.1Parameter Symbol Ratings UnitCollector ..
2SC3972 ,Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)Featuresn –5.5– 0.2 2.7– 0.2l High-speed switching–l High collector to base voltage VCBO–f 3.1– 0.1 ..
2SC3972A ,Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)Power Transistors2SC3972, 2SC3972ASilicon NPN triple diffusion planar typeFor high breakdown voltag ..
2SC3972A ,Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)Absolute Maximum Ratings (T =25˚C)n – +0.2C0.5 –0.10.8– 0.1Parameter Symbol Ratings UnitCollector ..
2SC3972A ,Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)Absolute Maximum Ratings (T =25˚C)n – +0.2C0.5 –0.10.8– 0.1Parameter Symbol Ratings UnitCollector ..
2SC3974 ,Power DeviceFeatures• High-speed switchingφ 3.2±0.1• High collector-base voltage (Emitter open) VCBO• Wide safe ..
2SA1258
