2SA1241 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Low Collector saturation voltage: V = −0.5 V (max) (I = −1 A) CE (sat) C Excel ..
2SA1242 ,Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier ApplicationsApplications Unit: mmMedium Power Amplifier
2SA1244 ,Transistor Silicon PNP Epitaxial Type (PCT process) High Current Switching ApplicationsApplications Unit: mm Low collector saturation voltage: V = −0.4 V (max) (I = −3 A) CE (sat) ..
2SA1244 ,Transistor Silicon PNP Epitaxial Type (PCT process) High Current Switching ApplicationsApplications Unit: mm Low collector saturation voltage: V = −0.4 V (max) (I = −3 A) CE (sat) ..
2SA1245 ,Transistor Silicon PNP Epitaxial Planar Type High Frequency Amplifier and Switching Applications VHF~UHF Band Low Noise Amplifier ApplicationsApplications Maximum Ratings (Ta 25°C)Characteristics Symbol Rating Unit Collector-base vo ..
2SA1246 ,High-VEBO, AF Amp ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3938GQL , Silicon NPN epitaxial planar type
2SC3938GQL , Silicon NPN epitaxial planar type
2SC3940 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit+0.152SC3940 V 30 V +0.2 0.45Collect ..
2SC3941 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca+0.15+0.2 0.45Parameter Symbol Rating Unit –0.10.45–0.1(1.27) (1 ..
2SC3941 ,Small-signal deviceTransistors2SC3941Silicon NPN triple diffusion planar typeFor high breakdown voltage general amplif ..
2SC3942 ,Power DeviceFeatures• High collector-emitter voltage (Base open) VCEOφ 3.1±0.1• Small collector output capacita ..
2SA1241
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications
2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1241 Power Amplifier Applications
Power Switching Applications Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) Excellent switching time: tstg = 1.0 µs (typ.) Complementary to 2SC3076
Maximum Ratings (Ta = 25°C) Unit: mm
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
