2SA1237 ,DIFFERENTIAL AMP APPLICATIONSFeatures'i"i""ii"ia'"'i'"i"'iTiiai Amp Applications. Excellent; In thermal equilibrium and suited f ..
2SA1238 ,DIFFERENTIAL AMP APPLICATIONSFeatures -. Excellent In thermal equilibrium and suited for use In first-stagedifferential amp.. Lo ..
2SA1240 ,DIFFERENTIAL AMP APPLICATIONSAbsolute Maximum Ratings at Ta=25°CCollector to Base Voltage VCBOCollector to Emitter Voltage VCEOE ..
2SA1241 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Low Collector saturation voltage: V = −0.5 V (max) (I = −1 A) CE (sat) C Excel ..
2SA1242 ,Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier ApplicationsApplications Unit: mmMedium Power Amplifier
2SA1244 ,Transistor Silicon PNP Epitaxial Type (PCT process) High Current Switching ApplicationsApplications Unit: mm Low collector saturation voltage: V = −0.4 V (max) (I = −3 A) CE (sat) ..
2SC3937 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3938GQL , Silicon NPN epitaxial planar type
2SC3938GQL , Silicon NPN epitaxial planar type
2SC3940 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit+0.152SC3940 V 30 V +0.2 0.45Collect ..
2SC3941 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca+0.15+0.2 0.45Parameter Symbol Rating Unit –0.10.45–0.1(1.27) (1 ..
2SC3941 ,Small-signal deviceTransistors2SC3941Silicon NPN triple diffusion planar typeFor high breakdown voltage general amplif ..
2SA1237
