2SA1226-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
' 4. CHARACTERISTIC _ '. ' . TEST CONDITIONS
_ Collecto ..
2SA1227A , PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR
2SA1235A , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)
2SA1235A , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)
2SA1237 ,DIFFERENTIAL AMP APPLICATIONSFeatures'i"i""ii"ia'"'i'"i"'iTiiai Amp Applications. Excellent; In thermal equilibrium and suited f ..
2SA1238 ,DIFFERENTIAL AMP APPLICATIONSFeatures -. Excellent In thermal equilibrium and suited for use In first-stagedifferential amp.. Lo ..
2SC3930 ,Small-signal deviceAbsolute Maximum Ratings T = 25°C 10˚aParameter Symbol Rating UnitCollector-base voltage (Emitter ..
2SC3931 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca10˚Parameter Symbol Rating UnitCollector-base voltage (Emitter o ..
2SC3934 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca10˚Parameter Symbol Rating UnitCollector-base voltage (Emitter o ..
2SC3936 ,Small-signal deviceAbsolute Maximum Ratings T = 25°C2.0±0.2aParameter Symbol Rating Unit10˚Collector-base voltage (Em ..
2SC3937 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3938GQL , Silicon NPN epitaxial planar type
2SA1226-L-2SA1226-T1B
