2SA1213 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Unit: mmPower Switching
2SA1213Y , Power Amplifier Applications
2SA1213Y , Power Amplifier Applications
2SA1213-Y , PNP Silicon Epitaxial Transistors
2SA1213-Y , PNP Silicon Epitaxial Transistors
2SA1213-Y , PNP Silicon Epitaxial Transistors
2SC3919 ,NPN Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance)Absolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3922 ,NPN Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance)Absolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3928 , For Low Frequency Amplify Application Sillcon Npn Epitaxial Type (Mini type)
2SC3928A , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3928A , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3928A , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SA1213
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications
2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1213 Power Amplifier Applications
Power Switching Applications Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High speed switching time: tstg = 1.0 µs (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC2873
Maximum Ratings (Ta = 25°C) PC
Note 1: Mounted on ceramic substrate (250 mm2 × 0.8 t)
Unit: mm
Weight: 0.05 g (typ.)
