2SA1200 ,Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Switching ApplicationsApplications Unit: mm High voltage: V = −150 V CEO High transition frequency: f = 120 MHz (t ..
2SA1201 ,Transistor Silicon PNP Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier ApplicationsApplications High voltage: V = −120 V CEO High transition frequency: f = 120 MHz (typ.) T ..
2SA1201-Y , PNP Silicon Power Transistors
2SA1201-Y , PNP Silicon Power Transistors
2SA1201-Y , PNP Silicon Power Transistors
2SA1202 ,Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier ApplicationsApplications Suitable for driver of 30 to 35 watts audio amplifier Small flat package P ..
2SC3892A , Silicon NPN Power Transistors
2SC3894 ,Ultrahigh-Definition Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta= 25°C unitCollector-to-Base Voltage Vaso 1500 VCollector-to-Emitter ..
2SC3896 ,Very High-Definition CRT Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitColleetorrto.Base Voltage Tuso 1500 VColleetor-tolhru'tte ..
2SC3897 ,Very High-Definition CRT Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta Cr-' 25°C unitColleetor-toBase Voltage VCBO 1500 VCo1leetoruto Emitt ..
2SC3899 , SWITCHING APPLICATIONS WITH BIAS RESISTANCE
2SC3900 ,Switching ApplicationsSANYO SEMICONDUCTOR CORP BEE D I 'i"i''i7ir71, 0007335 5 I28A1510, _ 7.3m28C3900 g 7135-”PN P/N FIN ..
2SA1200
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Switching Applications
2SA1200 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
2SA1200 High Voltage Switching Applications High voltage: VCEO = −150 V High transition frequency: fT = 120 MHz (typ.) Small flat package PC = 1 to 2 W (mounted on ceramic substrate) Complementary to 2SC2880
Maximum Ratings (Ta = 25°C) Note 1: 2SA1200 mounted on ceramic substrate (250 mm2 × 0.8 t)
Unit: mm
Weight: 0.05 g (typ.)
