2SA1163 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage: V = −120 V CEO Excellent h linearity: h (I = −0.1 mA)/h ..
2SA1174 ,Conductor Products, Inc. - New Jersey Semi-Conductor Products,
2SA1175 ,PNP SILICON TRANSISTORFEATURES
0 Complementary to the NEC 2SC2785 NPN transistor.
ABSOLUTE MAXIMUM RATINGS
Maximum ..
2SA1179 ,Conductor Holdings Limited - Silicon Epitaxial Planar Transistor
2SA1179 ,Conductor Holdings Limited - Silicon Epitaxial Planar Transistor
2SA1182 ,Transistor Silicon PNP Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching ApplicationsApplications Excellent h linearity : h = 25 (min) FE FE (2) at V = −6 V, I = −400 mA CE C ..
2SC3839K , Epitaxial Planar NPN Silicon Transistors
2SC3840 ,NPN SILICON POWER TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL _ CHARACTERISTIC
NPN SILICON POWER TRANSISTOR
..
2SC3841 ,UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDDATA SHEETDATA SHEETSILICON TRANSISTOR2SC3841UHF OSCILLATOR AND UHF MIXERNPN SILICON EPITAX ..
2SC3841-L ,For UHF tuner, MIXER and OSC.DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3841UHF OSCILLATOR AND UHF MIXERNPN SILICON EPITAX ..
2SC3841-T1B ,For UHF tuner, MIXER and OSC.features stable oscillation and small frequency drift against2.8±0.2any change of the supply voltag ..
2SC3851 , Silicon NPN Epitaxial Planar Transistor(Audio and PPC High Voltage Power Supply, and General Purpose)
2SA1163
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1163 Audio Frequency General Purpose Amplifier Applications High voltage: VCEO = −120 V Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) High hFE: hFE = 200~700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SC2713 Small package
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C)
Note: hFE classification GR (G): 200~400, BL (L): 350~700 ( ) marking symbol
Marking Unit: mm
Weight: 0.012 g (typ.)
