2SA1162 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage and high current: V = −50 V, I = −150 mA (max) CEO C Exce ..
2SA1162-GR , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1162-GR , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1162-GR , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1162-O , PNP Silicon Plastic-Encapsulate Transistor
2SA1163 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage: V = −120 V CEO Excellent h linearity: h (I = −0.1 mA)/h ..
2SC3829 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC383 ,NPN EPITAXIAL PLANAR TYPE (TV FINAL PICTURE IF AMPLIFIER APPLICATIONS)
2SC3831 , Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
2SC3833 , Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
2SC3838 , High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)
2SC3838K , High transition frequency. (Typ. fT= 1.5GHz) Small rbb.Cc and high gain. (Typ. 4ps)
2SA1162
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1162 Audio Frequency General Purpose Amplifier Applications High voltage and high current: VCEO = −50 V, IC = −150 mA (max) Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) High hFE: hFE = 70~400 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SC2712 Small package
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C)
Note: hFE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, ( ) marking symbol
Marking Unit: mm
Weight: 0.012 g (typ.)
