2SA1156 ,PNP SILICON POWER TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL
hFE **
ton
-tstg
tf _
VCEO(SUS)
VCEX(SU ..
2SA1162 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage and high current: V = −50 V, I = −150 mA (max) CEO C Exce ..
2SA1162-GR , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1162-GR , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1162-GR , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1162-O , PNP Silicon Plastic-Encapsulate Transistor
2SC3820 ,High-hFE, AF Amp ApplicationsAbsolute Maximum Ratings at Ta = 25''C unitCollector to Base Voltage Haro 60 VCollector to Emitter ..
2SC3822 ,Conductor Products, Inc. - BIPOLAR TRANSISSTORS RATINGS AND SPECIFICATIONS
2SC3822 ,Conductor Products, Inc. - BIPOLAR TRANSISSTORS RATINGS AND SPECIFICATIONS
2SC3825 ,Power TransistorPower Transistors . 25C382525C3825Silicon PNP TripIe—Diffused Planar TypeHigh Breakdown Voltage, Hi ..
2SC3829 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC383 ,NPN EPITAXIAL PLANAR TYPE (TV FINAL PICTURE IF AMPLIFIER APPLICATIONS)
2SA1156
