2SA1145 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C) Weight 1 0.36g (Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UN ..
2SA1146 , Silicon PNP Power Transistors
2SA1153 ,PNP SILICON TRANSISTORFEATURES . High Frequency Current Gain. (0.204 MAX.)
q High Speed Switching.
0 Small Output Capac ..
2SA1156 ,PNP SILICON POWER TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL
hFE **
ton
-tstg
tf _
VCEO(SUS)
VCEX(SU ..
2SA1162 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage and high current: V = −50 V, I = −150 mA (max) CEO C Exce ..
2SA1162-GR , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SC3803 ,Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications
2SC3803 ,Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications
2SC3807 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsOrdering number:EN2018ANPN Epitaxial Planar Silicon Transistor2SC3807High h , Low-FrequencyFEGenera ..
2SC3807. ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsFeatures [2SC3807] · Large current capacity (I =2A).C · Adoption of MBIT process. · High DC current ..
2SC3810 ,NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 ° ° °C)° °PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITC ..
2SC3811 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SA1145
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS
TOSHIBA ZSA1145
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SA'ii'ii45
AUDIO FREQUENCY AMPLIFIER APPLICATIONS Unit in mm
5.1 MAX.
0 Complementary to 2SC2705. if
0 Small Collector Output Capacitance : Cob = 2.5 pF(Typ.) E.
0 High Transition Frequency : fT = 200 MHz(Typ.) 0.75MAX.
LOMAX. -
MAXIMUM RATINGS (Ta = 25°C) Q g
CHARACTERISTIC SYMBOL RATING UNIT 2 9
Collector-Base Voltage VCBO -150 V
Collector-Emitter Voltage VCEO -150 V
Emitter-Base Voltage VEBO -5 V 122543 g
Collector Current IC -50 mA .n s-,'':'; A
Base Current IB -5 mA rt' '4" ot', , il
Collector Power Dissipation PC 800 mW er"
J unction Temperature Tj 150 "C £2 Egli-[EEEf-OR
Storage Temperature Range Tstg -55--150 "C 3. BASE
JEDEC TO-92MOD
JEITA -
TOSHIBA 2-5J1A
ELECTRICAL CHARACTERISTICS (Ta = 25°C) Weight .' 0.36g (Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = -150V, IE = 0 - - -0.1 pA
Emitter Cut-off Current IEBO VEB = -5V, 1C = O - - -0.1 PA
Collector-Emitter
Breakdown Voltage V(BR)CEO 1C - -1 mA, 1B - 0 -150 - - V
. hFE - -
DC Current Gain (Note) VCE - -5V, IC - -10mA 80 - 240
Collector-Emir - -
Saturation Voltage VCE(sat) IC - -10 mA, 1B - -1 mA - - -1.0 V
Base-Emitter Voltage VBE VCE = -5V, IC = -10rnA - -0.8 V
Transition Frequency fT VCE = -5V, IC = -10rnA - 200 - MHz
Collector Out ut Ca acitance C VCB = -10 V, IE = o, - 2 5 - F
p p ob f = 1 MHz . p
(Note) : hFE Classification 0 : 80--160, Y : 120-240
1 2001-10-29
TOSHIBA
IC - VCE
A COMMON
t EMITTER
S? Ta = 25'C
t IB = -0.1 mA
0 -2 -4 -6 -8 -10 -12 -16
C0LLECT0RaMITTER VOLTAGE VCE (V)
hFE - IC
COMMON
300 EMITTERSV
a Ta = 100°C C
-0.3 -1 -3 -10 -30 -50
COLLECTOR CURRENT 1C (mA)
VCE (sat) - IC
COMMON
g EMITTER
E -1 IC/IB = 10
it_'itt.
g iii, -0.5
a 8 -0.3
L90 Ta = 100°C
Rf,.? -0.1
i-?', 0.05 25
D - . -25
-0.3 -0.5 -1 -3 -5 -10
COLLECTOR CURRENT IC (mA)
-30 -50
1C (mA)
TRANSITA? b15358 UENCY COLLECTOR CURRENT
COLLECTOR OUTPUT
CAPACITANCE Cob (pF)
COLLECTOR POWER DISSIPATION
2SA1145
IC - VBE
COMMON
EMITTER
VCE = -5 v
Ta = 100°C
25 -25
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
BASE-EMITTER VOLTAGE VBE (V)
fT - IC
COMMON
300 EMITTER
V E = -10V
Ta=25°C C
-0.5 -1 -3 -10 -30 -100
COLLECTOR CURRENT IC (mA)
Cob - VCB
-0.5 -1 -3 -10 -30 -100
COLLECTOR-BASE VOLTAGE VCB (V)
PC - Ta
NO HEAT SINK
800 's
400 "ss,
0 40 80 120 160
AMBIENT TEMPERATURE Ta (°C)
2001 -1 0-29
TOSHIBA ZSA1145
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-10-29
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