2SA1129 ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SA1129PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY ..
2SA1145 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C) Weight 1 0.36g (Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UN ..
2SA1146 , Silicon PNP Power Transistors
2SA1153 ,PNP SILICON TRANSISTORFEATURES . High Frequency Current Gain. (0.204 MAX.)
q High Speed Switching.
0 Small Output Capac ..
2SA1156 ,PNP SILICON POWER TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL
hFE **
ton
-tstg
tf _
VCEO(SUS)
VCEX(SU ..
2SA1162 ,Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage and high current: V = −50 V, I = −150 mA (max) CEO C Exce ..
2SC3795 ,Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)Power Transistors2SC3795, 2SC3795ASilicon NPN triple diffusion planar typeFor high breakdown voltag ..
2SC3795A ,Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)Absolute Maximum Ratings (T =25˚C)nCf 3.1– 0.1–Parameter Symbol Ratings UnitCollector to 2SC3795 8 ..
2SC3803 ,Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications
2SC3803 ,Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications
2SC3807 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsOrdering number:EN2018ANPN Epitaxial Planar Silicon Transistor2SC3807High h , Low-FrequencyFEGenera ..
2SC3807. ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsFeatures [2SC3807] · Large current capacity (I =2A).C · Adoption of MBIT process. · High DC current ..
2SA1129
