2SA1095 ,Trans GP BJT PNP 60V 2A 3-Pin TO-126B-A1FEATURES: . _-'t _ .5
. High s,iaii-',,i,, Voltage , VCE0=é16QV
. High Transition Frequency t ..
2SA1095 ,Trans GP BJT PNP 60V 2A 3-Pin TO-126B-A1POWER AMPLIFIER hPRLICATIONS.
2SA1096 ,Trans GP BJT PNP 50V 2A 3-Pin TO-126B-A1Absolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit0.75±0.10.5±0.1Collector-base voltag ..
2SA1102 , PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
2SA1111 ,Trans GP BJT PNP 150V 1A 3-Pin(3+Tab) TO-220ABMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SA1112 ,Trans GP BJT PNP 180V 1.5A 3-Pin(3+Tab) TO-220ABapplications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion ..
2SC3773 ,NPN Epitaxial Planar Silicon Transistor UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3775 ,NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amplifier, Wide-Band Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3776 ,NPN Epitaxial Planar Silicon Transistor UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3779 ,NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amp, Wide-Band Amp ApplicationsFeaturesNo 1954C2s03779NPN Epitaxial Planar Silicon TransistorUHF Low-Noise Amp,Wide-Band Amp Appli ..
2SC3780 ,Very High-Definition CRT Display, Video Output ApplicationsFeatures. High fT (r, typ: 800MHz)2 S A ll; 7 l; /2 S C 3 7 8 0PNP/NPN Epitaxia P anar ypeSrlicon T ..
2SC3781 ,Very High-Definition CRT Display, Video Output ApplicationsAbsolute Maximum Ratings at Ta=25°C unitCo11etatoruto, Base Voltage VCBO . (-)120 VCollector_to.Emi ..
2SA1095
Trans GP BJT PNP 60V 2A 3-Pin TO-126B-A1
_',l)jr;gijftiitit
SI LICON PNP EPi‘fAXIAL TYPE (PCT PROCESS)
Unit in mm
_ -. - .. A , _ Msmx 6.6MAX.
POWER AMPLIFIER APPLICATIONS. GLO, 20%
FEATURES. . , - 24:4+02 '
. High sua-L, Voltage t viEoc-ysoy F ' t stsaxb.st lrg é j
. High Transition Frequency t fT=60MHz (Typ ) .. 'tit i it" élg
_ I t' 5.6 .
. Complementary to 2SC2565. t . ' J is',
. Recommended-for 100N High-Fidelity Aidio . tsv-i-r. 33f.
Frequency Amplifier Output Stage. f? I 4 E
' , . LOILS .' "t
- .' 25
r 545iQ15 0.6-- --0.10
A - ' . . .' T II
MAXIMUM YTtrlt1s (Ta=25°C) ati 0.5 zaigza.
CHARACTERISTIC SYMBOL RATING UNIT , ----
Collector-Base Voltage- NCBO -160 V I; l (5 sl,
collector-E/ber Voltage VCEO -160 V L BABE
Emut:er-Jlas.e Voftage 'VEBO . -r v“ Vi; 2.00LLEDTOR (HEAT SINK)
co11eetoi: Cirrent 3 ' IC -15. _ A -.. a EMITTER
Emitter Curt/ent _ IE 13 A JEDEO , _
Collector Power Dissipation . . EIAif. _ .
(Tc=25°c) PC 159 W TOSHIBA I' 2 -. 34A 1A
Junction Temperature ‘T3 150 " 't1gheil0.8g
Storage Temperature Range 'Tstg -55ru150 "c
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP, MAX. UNIT
Collector Cue-off Current 1030 vcB=-160v, IE=0 - - ~50 ph
Emitter "Cut-off Current IEBO 1lEe-51l, Ic=0 f; - - -50 pit
Collector-Emittef
V I =-0.1A I =0 .-160 - - V
Breakdown Voltage (BR)CEO C , B
Emitter-Base .--- . --= - - -
Breakdown.Voltage V(BR)EBO IE 0.01As IC l 5 V
. FE(1) v .--s-51/ I =-1A 55 -. 240
DC'Currgng Gain , 3 -(Note) CE , C . '
. hFE(2) VCE=-5V, Ic=-lih 40 - -
Ctukeetor-EmLeter
Saturation Véltage . VCE(sat) IC=-5A, Ar---".." - - ~2.0
Base-%4tter Voltgge VBE VCE=-5V, Ic=-SA. - - -2.o V
rTransitLfii Frequency "i VCE=-10V, Ic=-1A - 60 - MHz
Collector Output Capacitance 'Cob 1lat-101l,rs=0,f--i1M1lz - 350 - pF
Note t hFE(1) Classification R t 55m110;
o l 80s160, Y t 12tyu240
TOSHIBA GUHPDHAT'IUN ll||lll|||lllllllImlllllllllllllIlll||llllllllllllll|l|HI|llllllllll|lIll|llllll|llllllllllllll|||IIIII|I|llillllllll||IHIIIllllHlllIllllllllllllllll|HI|IIlllllllllulIIIIIIHIIIIllINIllllllllllllllllfllllllllllll
COMMON EMITJFER
To = " T?
I =-- 10m
-8 - --16 -
"'commé'ron CURRENT Ic (A)
cor,r,iarvoir-nsmmoR VOLTAGE vow)
IC - VBE
--16 -
' Il'c (A)
COLLECTOR CURRENT
COMMON EMITTER
Iron = -t51r
o -1.o -2.0 -43.0 -A.o
BAQE'EMLTTEH VOLTAQE: VBE (v) ,
SAFE' OPERATING AREA . -
lo MAX.(PULSED)¥
1c (A)
, SINGLE N0NREPtilTiTI0l
_ PULSE Te = 25C
--O.6 CURVES MUST BE
DERATED LINEARLY
WITH momss IN
TEMPERATURE
COLLECTOR CURRENT
~03 -1 -3- ~-1o -130- -.100 -an _
-t3oLLMTOR-BMiTTER VOLTAGE v05; (V)
hFE - 10
Te = lOO'C
COMMON EMITTER
VCE = -5V
DC CURRENT GAIN hm
-MI -om --th1 -0.3 --1 --3 ~10 --30
COLLECTOR CURRENT ig (A)
VCE(sat) - Ic
COMMON EMITTER
Io/IB=10
vCE(8at) 0/)
-om HII ~05 --1 --3 ~10 -eo
COLLECTOR CURRENT 10 (A)
COLLDS TOR‘EMI TTFR SATURAT ION
V0 LTAGE
fT--io
"l, El: COMMON EMITTER
. g5 VCE=“10V
H F4 Tc=25'C
bl n 10
H -o.01 --th03 -m -Q3 --1 -G -45
COLLECTOR CURRENT Ic (A)
Te =Ta
INFINITE HEAT SINK
PC (W)
COLLECTOR POWER DISSIPATION
o 25 so 'm 100 125 150
. AMBIENT TEMPERATURE Ta ('c)
lllll|IlllfllIIIIIIIl|llllllllflllllllllllIllllllllllllllllllHllIllllllIIIHIIllllHll|lllmllllllllllllfllllllllllllllllllllllflllIIIHHIIIIUII|IIHIIIIIIHIIHllHl|l|lllllllllullllHlllllllll|lllllH||llllll||||I TDBHIBA con P DHATIDN
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