2SA1093 ,Trans GP BJT PNP 60V 2A 3-Pin TO-126B-A1FEATURES: ."
. Compiemeptaiy to 2SC256T
. Reeoiiieniieirpor 50ll audrojmplit.ikr output stage.
..
2SA1095 ,Trans GP BJT PNP 60V 2A 3-Pin TO-126B-A1FEATURES: . _-'t _ .5
. High s,iaii-',,i,, Voltage , VCE0=é16QV
. High Transition Frequency t ..
2SA1095 ,Trans GP BJT PNP 60V 2A 3-Pin TO-126B-A1POWER AMPLIFIER hPRLICATIONS.
2SA1096 ,Trans GP BJT PNP 50V 2A 3-Pin TO-126B-A1Absolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit0.75±0.10.5±0.1Collector-base voltag ..
2SA1102 , PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
2SA1111 ,Trans GP BJT PNP 150V 1A 3-Pin(3+Tab) TO-220ABMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SC3773 ,NPN Epitaxial Planar Silicon Transistor UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3775 ,NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amplifier, Wide-Band Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3776 ,NPN Epitaxial Planar Silicon Transistor UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3779 ,NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amp, Wide-Band Amp ApplicationsFeaturesNo 1954C2s03779NPN Epitaxial Planar Silicon TransistorUHF Low-Noise Amp,Wide-Band Amp Appli ..
2SC3780 ,Very High-Definition CRT Display, Video Output ApplicationsFeatures. High fT (r, typ: 800MHz)2 S A ll; 7 l; /2 S C 3 7 8 0PNP/NPN Epitaxia P anar ypeSrlicon T ..
2SC3781 ,Very High-Definition CRT Display, Video Output ApplicationsAbsolute Maximum Ratings at Ta=25°C unitCo11etatoruto, Base Voltage VCBO . (-)120 VCollector_to.Emi ..
2SA1093
Trans GP BJT PNP 60V 2A 3-Pin TO-126B-A1
TOSHIBA 4HyISCRiiyT'E/0PT01 Sl, oE1lnivri'iesio 13007251 ii! T '
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SILICON PNP EPlTAXIAU TYPE (PCT PROCESS) _ l ...e. (2SAI M3 _
b Unit in mm
AUDIOUFREQ'UFNCY POWER AMPLIFIER APPLICATIONS. Lagmxx {63.2in
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FEATURES: J' . TL-t_..,,,
. Compiem‘epta-ry to 2502563. - is,
- . w.-' ' _ _ _ " -= ID
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. High transition frequency i fT=90MHz(Typ.) - 3
_ t en: tl
- 10 4.125 a--. L
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MAXIMUM RATINGS (Ta.=25°C) l g
. 03 a?
CHARACTERISTIC SYMBOL RATING UNIT. (3 d L65 _.
Coi1ecfiiir"...Biist, Voltage _ - . Iraso -120 V _ ---eu---l , ,
col-L"''""""".'".' Voltage‘ k ”Vch --120 V L, BASF-
Emiiter:-Basd Voltage _ ", VEBO -5 ll 2. COLLECTOR (HEAT sum)
CollectérSCurrent .. To ", --8 A ik EMITTE“
Base. Current " IB - . -0.8 A JEDEG . A -
Collec'for Poweii Dissipation _ El” -
(Tc=25°c) PC Jo w TOSHIBA a--16t31A
Junction Temperature _ .' - '.Tj 150 h, Weight t ti.6g
Storage Température Range' ' Tstg» -5r150 ." oc,.
ELEdnirat, CHARACTERISTICS "(ipa=25oc) .
. CHARACTERISTIC . SYMBOL TEST CONDITION MIN. Trp. MAX. UNIT
i Collectqr Cuttoff Current ICBO VCB=-120V, IEEO l. - - -50 ph
:' Emitter Cut-off Current IEBo . YEBr=--5y, 10:0 " . . - - -50 ph
. co1u/toruiiaitter H h ' _ . . . A .
' _ ' =- . = . - - - If
Breakdown Voltage V(BR)CE0 IC 0 05A, 1-13 0 J .120
. me l . trd1,) =".- . =- " . . "- o
DC Current qtrin . .' '(Notg Yap--. w, IC_ lk L 55 24
_ ..:<'-* C" _ q . hFE(2) VCEF-SV, Ic=-4h Po - -
Collector Efditter . "ss _ . _ -
Sausr.ation ‘Voltage - vCE(sat) Tty--c-"th, IB----0.4lt . -, -1.0 -2.0 v
BaéeJEmittei Voltage VBE vay---5v, 1tr---4h - l -1.5 -2,5 v
Transition Frequency , 'fT ' VCE=~10V, Ttrz-1h - - 90 = MHz
Collector Output Capacitance Cob 1%r---101r, IE=O, f=1MHz - 150 - pF
Note: hFE(1) Classification. R:55~110, 0:80~160, - Y:120~240
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This Material Copyrighted By Its Respective Manufacturer
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COMMON EMITTER
_ Tc=25C
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COMMON EMITTER
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9097256 TOSHIBA (DISCRETE IOPTO)
5a; 07252 origg‘i‘gJ”
t, " “F3" 1‘ ; ,
chMoN mum'rma
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DC CURRENT mam hm
tOI -0.03 ~01 -as -1 -3 -10
COLLECTOR CURRENT 10 (A)
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-u01 £05 .-a1 ~05 -1 -5 -m
COLLECTOR CURRENT Io (A)
' rf - IC
il li, MO commu EMITTER
V =-1ov
d H_ CE .
ll? b4 f Tc=256
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-001 -0t93e .-ty1 -a3 -1 -1, -ti l
a . COLLECTOR CURRENT Io (A).
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This Material Copyrighted By Its Respective Manufacturer
TOSHIBA 4H)1ScRETEv()PT01, SE 95]] anwasn unmasa g, T
l ----- 9097250 TOSHIBA (DISCRETE/OPTO)
SAFE OPERATING AREA
, . ' . _ Ic MAX. (PULSED)
_ Io MAX,
spa _ Ta ~10 \cou'rmous)
A Tc ==Ta C? -6
v INFINITE HEAT SINK o
a H -.lf
g fe o -,
a :9. g
S Q S -at5
_ M WI
taa g -03 .8. SINGLE NONREPETITI
' 8 8 VE PULSE Tc=25’C
_ CURVES MUST BB
I 5 50 100 125 150 . ,
' o 2 75 - . V DEBATE!) LI NEARLY
AMBIENT TEMPERATURE Ta CC) . "01 WITH INCREASE IN
. TEMPERATURE.
-3 -ti -m -30 ~50 -1no -300
tgoLLMToR-BMITTRR voonm vCE(v)
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soc‘mzéa' 07.33.21 1
This Material Copyrighted By Its Respective Manufacturer
www.ic-phoenix.com
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