2SA1091 ,Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control ApplicationsApplications High voltage: V = −300 V, V = −300 V CBO CEO Low saturation voltage: V = −0.5 V ..
2SA1093 ,Trans GP BJT PNP 60V 2A 3-Pin TO-126B-A1FEATURES: ."
. Compiemeptaiy to 2SC256T
. Reeoiiieniieirpor 50ll audrojmplit.ikr output stage.
..
2SA1095 ,Trans GP BJT PNP 60V 2A 3-Pin TO-126B-A1FEATURES: . _-'t _ .5
. High s,iaii-',,i,, Voltage , VCE0=é16QV
. High Transition Frequency t ..
2SA1095 ,Trans GP BJT PNP 60V 2A 3-Pin TO-126B-A1POWER AMPLIFIER hPRLICATIONS.
2SA1096 ,Trans GP BJT PNP 50V 2A 3-Pin TO-126B-A1Absolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit0.75±0.10.5±0.1Collector-base voltag ..
2SA1102 , PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
2SC3773 ,NPN Epitaxial Planar Silicon Transistor UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3775 ,NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amplifier, Wide-Band Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3776 ,NPN Epitaxial Planar Silicon Transistor UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3779 ,NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amp, Wide-Band Amp ApplicationsFeaturesNo 1954C2s03779NPN Epitaxial Planar Silicon TransistorUHF Low-Noise Amp,Wide-Band Amp Appli ..
2SC3780 ,Very High-Definition CRT Display, Video Output ApplicationsFeatures. High fT (r, typ: 800MHz)2 S A ll; 7 l; /2 S C 3 7 8 0PNP/NPN Epitaxia P anar ypeSrlicon T ..
2SC3781 ,Very High-Definition CRT Display, Video Output ApplicationsAbsolute Maximum Ratings at Ta=25°C unitCo11etatoruto, Base Voltage VCBO . (-)120 VCollector_to.Emi ..
2SA1091
Transistor Silicon PNP Triple Diffused Type (PCT process) High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications
2SA1091 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
2SA1091 High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications High voltage: VCBO = −300 V, VCEO = −300 V Low saturation voltage: VCE (sat) = −0.5 V (max) Small collector output capacitance: Cob = 6 pF (typ.) Complementary to 2SC2551.
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C)
hFE (1)
(Note)
Note: hFE (1) classification R: 30~90 O: 50~150
Unit: mm
Weight: 0.21 g (typ.)
