2SA1022 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitBase-emitter ..
2SA1034 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca10˚Parameter Symbol Rating Unit2SA1034 V −35 VCollector-base vol ..
2SA1035 ,Small-signal deviceFeatures• Low noise voltage NV• High forward current transfer ratio hFE 1 2• Mini type package, all ..
2SA1035 ,Small-signal deviceTransistors2SA1034, 2SA1035Silicon PNP epitaxial planar typeUnit: mmFor low-frequency and low-noise ..
2SA1036K T146 , Medium Power Transistor
2SA1036K T146P , Medium Power Transistor
2SC3647T-TD-E , Bipolar Transistor
2SC3649 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3650 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3650 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsOrdering number:EN1780ANPN Epitaxial Planar Silicon Transistor2SC3650High h , Low-FrequencyFEGenera ..
2SC3650 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsFeatures [2SC3650] · High DC current gain (h =800 to 3200).FE · Low collector-to-emitter saturation ..
2SC3651 ,High Gain, Low Frequency, General Purpose NPN Amplifier TransistorAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SA1022
