2SA1020 ,One Watt High Current PNP TransistorAPPLICATIONS I 5.1MAX. I0 Low Collector Saturation Voltage
: VCE(sat)= -0.5V(Max.) (IO: -1A)
OJ ..
2SA1020-Y , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1020-Y , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1020-Y , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1022 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitBase-emitter ..
2SA1034 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca10˚Parameter Symbol Rating Unit2SA1034 V −35 VCollector-base vol ..
2SC3647 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3647T-TD-E , Bipolar Transistor
2SC3649 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3650 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3650 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsOrdering number:EN1780ANPN Epitaxial Planar Silicon Transistor2SC3650High h , Low-FrequencyFEGenera ..
2SC3650 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsFeatures [2SC3650] · High DC current gain (h =800 to 3200).FE · Low collector-to-emitter saturation ..
2SA1020
One Watt High Current PNP Transistor
TOSHIBA
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SA1020
2SA1020
POWER AMPLIFIER APPLICATIONS Unit in mm
POWER SWITCHING APPLICATIONS 5.1MAX.
0 Low Collector Saturation Voltage g
: VCE(sat) = -0.5V (Max.) (IC = -IA) 0.75MAX4
o High Speed Switching Time : tstg=1.0/s(Typ0 1.0MAX, - F
0.8MAX. 5' if Le
0 Complementary to 2802655. 3 ii
MAXIMUM RATINGS (Ta = 25°C) “1.27
CHARACTERISTIC SYMBOL RATING UNIT 11 2 3 if
2.54 E
Collector-Base Voltage VCBO -50 V Cr) s-'t, §-
Collector-Emi; Voltage VCEO -50 V r ii-i.
Emitter-Base Volta e V -5 V l. EMITTER
g EBO 2. COLLECTOR
Collector Current 10 -2 A 3. BASE
Collector Power Dissipation PC 900 mW JEDEC TO-92MOD
Junction Temperature Tj 150 °C JEITA -
Storage Temperature Range Tstg -55-150 "C TOSHIB A 2-5J1A
Weight : 0.36g (Typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB= -50V, IE =0 - - -1.0 PA
Emitter Cut-off Current IEBO VEB= -5V, IC =0 - - -1.0 PA
Collector-Emitter Breakdown - -
Voltage V(BR)CEO IC - - 10mA, IB - 0 - 50 - - V
h 1 V = -2V, I = -0.5A 70 - 240
DC Current Gain FE ( ) CE C
hFE (2) VCE = -2V, 10 = - 1.5A 40 -
Collector-Emitter Saturation - -
Voltage VCE(sat) IC - - IA, IB - -0.05A - - -0.5 V
Base-Emitter Saturation - -
Vol tage VBE(sat) 1C - - IA, 1B - - 0.05A - - - 1.2 V
Transition Frequency fT VCE = -2V, IC = -0.5A - 100 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = 0, f = lMHz - 4O - pF
Turn-on Time ton 20,as INPUT IB2 OUTPUT - 0.1 -
. . 132 - c:
:3: mg Storage Time tstg IB1 IBI 3, - 1.0 - ps
. -IB1=IB2=0.05A, V C:
Fall Time tf DUTY CYCLES 1% -30V - 0.1 -
(Note) : hFE(1)C1assification O : 70--140, Y : 120-240
2001 -1 0-29
TOSHIBA
COLLECTOR—EMITTER VOLTAGE VCE (V) COLLECTOEEMITTER VOLTAGE VCE (V)
COLLECTOR-EMIT’I‘ER SATURATION
VOLTAGE VCE(sat) (V)
VCE - IC
COMMON EMITTER
Ta = 25°C
-20 -40 -80
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8
COLLECTOR CURRENT IC (A)
VCE - IC
COMMON EMITTER
IB-- -10mA Ta-- -55°C
-20 -30
0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8
COLLECTOR CURRENT IC (A)
VCE(sat) - IC
COMMON EMITTER
- 0 IC / IB = 20
-0.1 Ta=100°C
-0.005 -0.01 -0.03 -0.1 -0.3 -1 -3
COLLECTOR CURRENT Ic (A)
DC CURRENT GAIN hFE COLLECTOR—EMITTER VOLTAGE VCE (V)
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
2SA1020
VCE - IC
COMMON EMITTER
Ta = 100'C
-20 -30 -40 -60 -80
IE: -5ruA
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8
COLLECTOR CURRENT IC (A)
hFE - IC
COMMON EMITTER
VCE = - 2v
Ta = 100''C
-0.005 -0.01 -0.03 -0.1 -0.3 -1 -3
COLLECTOR CURRENT IC (A)
VBE(sat) - IC
COMMON EMITTER
- IC / IB = 20
-0.005 -0.01 -0.03 -0.1 -0.3 -1 -3
COLLECTOR CURRENT IC (A)
2001 -1 0-29
TOSHIBA
COLLECTOR CURRENT 10 (A)
COLLECTOR CURRENT 10 (A)
IC - VBE
/ / COMMON
EMITTER
ll VCE=-2V
-1.6 fl
_1.0 I
Ta=100°Cl /
/ 25 -55
-0.5 /) /
0 // y
o -0.4 -0.8 -1.2 -1.6
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATION AREA
-5 llllllll
-IC MAX.(PULSED)).K.
IC MAX. (CONTINUOUS)\
) \ \ l
'nsissN1rnssis
’g’,a"
X SINGLE NONREPETITIVE N
PULSE Ta=25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE tu
IN TEMPERATURE
, ,a,—'/
VCEO MAX.
-10 -30
COLLECTOR-EMITTER VOLTAGE VCE (V)
2SA1020
COLLECTOR POWER DISSIPATION PC (mW)
40 80 120 160 200 240
AMBIENT TEMPERATURE Ta (°C)
2001 -1 0-29
TOSHIBA ZSA1020
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-10-29
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