2SA1018 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SA102 , Ge PNP Drift
2SA102 , Ge PNP Drift
2SA1020 ,One Watt High Current PNP TransistorAPPLICATIONS I 5.1MAX. I0 Low Collector Saturation Voltage
: VCE(sat)= -0.5V(Max.) (IO: -1A)
OJ ..
2SA1020-Y , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1020-Y , TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SC3646 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3647 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3647T-TD-E , Bipolar Transistor
2SC3649 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3650 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3650 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsOrdering number:EN1780ANPN Epitaxial Planar Silicon Transistor2SC3650High h , Low-FrequencyFEGenera ..
2SA1018
