2SA1015 ,PNP SILICON TRANSISTORApplications Unit: mmDriver Stage Amplifier
2SA1015-Y , PNP Silicon Plastic-Encapsulate Transistor
2SA1015-Y , PNP Silicon Plastic-Encapsulate Transistor
2SA1015-Y , PNP Silicon Plastic-Encapsulate Transistor
2SA1015-Y , PNP Silicon Plastic-Encapsulate Transistor
2SA1015-Y , PNP Silicon Plastic-Encapsulate Transistor
2SC3624 ,AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD‘NSILICONWTRANSISWT0RMS
ZSC3624, ZSC3624A
AUDIO FREQUENCY AMPLIFIER, SWITCHING
NPN SILICON E ..
2SC3624A ,AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta =
CHARACTERISTIC SYMBOL
2SC3624A-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta =
CHARACTERISTIC SYMBOL
2SC3624-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta =
CHARACTERISTIC SYMBOL
2SC3624-T2B ,Silicon transistor‘NSILICONWTRANSISWT0RMS
ZSC3624, ZSC3624A
AUDIO FREQUENCY AMPLIFIER, SWITCHING
NPN SILICON E ..
2SC3626 , Silicon NPN Power Transistors
2SA1015
PNP SILICON TRANSISTOR
2SA1015 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1015 Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max) Excellent hFE linearity : hFE (2) = 80 (typ.) at VCE = −6 V, IC = −150 mA : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) Low noise: NF = 1dB (typ.) (f = 1 kHz) Complementary to 2SC1815.
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C) VCE � �6 V, IC � �0.1 mA, RG � 10 k�,
f � 1 kHz
Note: hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400
Unit: mm
Weight: 0.21 g (typ.)
