2SA1012 ,TO-220 Plastic-Encapsulate Biploar TransistorsAPPLICATIONSUnit in mm. . $55.61 0.2
Low Collector Saturation Voltage 10 ?MA 1/: VCE(sat) = -0.4V ..
2SA1013 ,TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) COLOR TV VERT. DEFLECTION OUTPUT, COLOR TV CLASS B SOUND OUTPUT APPLICATIONSAPPLICATIONS I 35‘1MAX- I0 High Voltage : VCEO= -160V
0 Large Continuous Collector Current Capab ..
2SA1013-Y , PNP Epitaxial Silicon Transistor
2SA1013-Y , PNP Epitaxial Silicon Transistor
2SA1015 ,PNP SILICON TRANSISTORApplications Unit: mmDriver Stage Amplifier
2SA1015-Y , PNP Silicon Plastic-Encapsulate Transistor
2SC3618-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25°C)
"''Pulsed: PW g 350 us, Duty Cycle l; 2 %
hFE Classifi ..
2SC3618-T2 ,Silicon transistoroftslllEiiiiiC:
DATA SHEET
SILICON TRANSISTOR
2SC361 tit
NPN SILICON EPITAXIAL TRANSIST ..
2SC3619 ,Silicon NPN Power Transistors TO-126 packageAPPLICATIONS0 High Voltage : VCEQ=3UUV0 Small Collector Output Capacitance : Cob=3.0pF (Typ.)MAXIMU ..
2SC3620 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) COLOR TV HORIZONTAL AND COLOR TV CHROMA OUTPUT APPLICATIONSAPPLICATIONS Unit in mmCOLOR TV CHROMA OUTPUT
2SC3620 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) COLOR TV HORIZONTAL AND COLOR TV CHROMA OUTPUT APPLICATIONSAPPLICATIONS _f1._3A/rA2,).75.8gi3.1 10.10 High Voltage : VCEO=300Vm.oHO.T'-._0 Recommended for Chr ..
2SC3620. ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) COLOR TV HORIZONTAL AND COLOR TV CHROMA OUTPUT APPLICATIONS2SC3620TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)COLOR TV HORIZONTAL DRIVER
2SA1012
TO-220 Plastic-Encapsulate Biploar Transistors
TOSHIBA
2SA1012
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
2SA'ii01i2
HIGH CURRENT SWITCHING APPLICATIONS.
. Low Collector Saturation Voltage
.' VCE(sat) = -0.4V (Max.) at IC = -3A
q High Speed Switching Time
. Complementary to 2SC2562.
MAXIMUM RATINGS (Ta = 25°C)
: tstg = 1.0ps (Typ.)
INDUSTRIAL APPLICATIONS
Unit in mm
10.3MA .
1d',yil-s1
gfs.st0.2
6.7MAX.
lSSMAX.
5.6MAX.
1.5MAX . _
laOMIN.
(1'76 mm
CHARACTERISTIC SYMBOL RATING UNIT _
Collector-Base Voltage VCBO -60 V 2.54. 2.54 E
Collector-Emitter Voltage VCEO -50 V 3% 3 L I 1
Emitter-Base Voltage VEBO -5 V i913 a 4
Collector Current 10 -5 A l. B ASE V
Collector Power Dissipation P 2 W 2. COLLECTOR(HEAT SINK)
(Tc: 25°C) C 5 3. EMITTER
Junction Temperature Tj 150 "C JEDEC TO-220AB
Storage Temperature Range Tstg -55--150 "C EIAJ SC-46
TOSHIBA 2-10A1A
Mounting Kit No. AC75
ELECTRICAL CHARACTERISTICS (Ta =25°C) Weight : 1.9g
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB= -50V, IE =0 - - - 1 pA
Emitter Cut-off Current IEBO VEB= -5V, IC =0 - - - 1 pA
Collector-Emitter - -
Breakdown Voltage V(BR)CEO IC - - 10mA, IB - 0 -50 - - V
hFE(1)
V =-IV, I =-IA 7O - 240
DC Current Gain (Note) CE C
hFE(2) VCE = - IV, IC = -3A 30 - -
Saturation Collector-Emitter VCE(sat) IC-- -3A, IB = -0.15A - -0.2 -0.4 V
Voltage Base-Emitter VBE(Sat) 1c= -3A, IB = -0.15A - -0.9 -1.2
Transition Frequency fT VCE = -4V, 1C = - IA - 60 - MHz
Collector Output Capacitance Cob VCB = - 10V, IE = 0, f = lMHz - 170 - pF
Turn-on Time ton INPUT L132 OUTPUT - 0.1 -
20ps I - C}
Switching . B2 IB1 3
Time Storage Time tstg IBIIEF-l - 1.0 - ,us
-I =1 =0.15A _
Fall Time tf Illl,1, CgéLE§2% VCC-- -30V - 0.1 -
Note : hFE(1) Classification
0 .' 70--140, Y : 120-240
TOSHIBA
VCE - IC
COMMON
EMITTER
Tc = 25''C
I = -60mA - 150
-30 -100
COLLECTOR-EMITTER VOLTAGE
0 - 1 - 2 - 3 - 4 - 5 - 6 - 7
COLLECTOR CURRENT IC (A)
VCE - IC
COMMON
EMITTER
Tc = - 55''C
IB-- -60mA _ 100
-80 -150
COLLECTOR-EMI'I'I‘ER VOLTAGE
o -1 -2 -3 -4 -5 -6 -7
COLLECTOR CURRENT Ic (A)
VCE(sat) - IC
COMMON
EMITTER
IC / IB = 20
COLLECTOR-EMITTER SATURATION
VOLTAGE vcmm (V)
-0.05 25
-0.03 -0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE COLLECTOR-EM‘IT'I‘ER VOLTAGE
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
2SA1012
VCE - IC
COMMON
EMITTER
Tc = 100°C
IB-- -60mA -150 -200
0 -1 -2 -3 -4 -5 -6 -7
COLLECTOR CURRENT IC (A)
hFE - IC
COMMON
EMITTER
VCE = - IV
Te = 100°C
-0.03 -0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT IC (A)
VBE(sat) - IC
COMMON
-5 EMITTER
IC / 1B = 20
-0.03 -0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT IC (A)
TOSHIBA
Ic (A)
COLLECTOR CURRENT
10 (A)
COLLECTOR CURRENT
IC - VBE
COMMON
EMITTER
VCE = - IV
Te-- 100°C
0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
-Ic MAX.(PULSED))K.
- 10 MAX. \
-5 - (CONTINUOUS) i \ 10ms.2f
-3 l l l N k \ /
DC OPERATION N Imsy.4
Te=25''C
-0.5 \ l
)k. SINGLE \ \
NONREPETITIVE N ,
-0.3 PULSE Ta=25°C "N,
CURVES MUST BE DERATED
LINEARLY WITH INCREASE N
0.1 IN TEMPERATURE. VCEO MAX.
'_1 -3 -10 -30 -50 -100
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR POWER DISSlPATION
2SA1012
PC - Ta
-0) C) Tc=Ta
_:\ (INFINITE HEAT SINK)
24 2) 200x200x2mm Ae
(HEAT SINK)
(5) 100x100x2mm Ad
20 - (2) (HEAT SINK)
-, (T) 50X50X2mm At
16 " (HEAT SINK)
N (5) NO HEAT SINK
12 - Ci"
, , ",
8 - CO "N ,
-r%s \
4 - I "s, "
_ti) "sts?
0 l --.-...2
O 40 80 120
160 200 240 280 320
AMBIENT TEMPERATURE Ta
TOSHIBA ZSA1012
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-05-24
:
www.loq.com
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