2SA1006B ,PNP/NPN SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (Ta=25 "C)
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2SA1006,1006A,1006B/2Sc2336, 2336A,23368
: ..
2SA1008 ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SA1008PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWI ..
2SA1009 ,PNP SILICON POWER TRANSISTORSELECTRICAL CHARACTERISTICS (Ta =25 °C)
SYMBOL CHARACTERISTIC '
Turn-on Time
Storage Time
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2SA1009A ,PNP SILICON POWER TRANSISTORSFEATURES
The 2SA1009, 2SA1009A are PNP triple diffused transistors de..
signed for switching re ..
2SA101 , Ge PNP Drift
2SA1010 ,SILICON POWER TRANSISTORDATA SHEETSILICON POWER TRANSISTOR2SA1010PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-VOLTAGE HI ..
2SC3617 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 oc)'
CHARACTERISTIC SYMBOL TYP. MAX. UNIT TEST CONDITIONS
..
2SC3617-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 oc)'
CHARACTERISTIC SYMBOL TYP. MAX. UNIT TEST CONDITIONS
..
2SC3618 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDoftslllEiiiiiC:
DATA SHEET
SILICON TRANSISTOR
2SC361 tit
NPN SILICON EPITAXIAL TRANSIST ..
2SC3618-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25°C)
"''Pulsed: PW g 350 us, Duty Cycle l; 2 %
hFE Classifi ..
2SC3618-T2 ,Silicon transistoroftslllEiiiiiC:
DATA SHEET
SILICON TRANSISTOR
2SC361 tit
NPN SILICON EPITAXIAL TRANSIST ..
2SC3619 ,Silicon NPN Power Transistors TO-126 packageAPPLICATIONS0 High Voltage : VCEQ=3UUV0 Small Collector Output Capacitance : Cob=3.0pF (Typ.)MAXIMU ..
2SA1006-2SA1006B-2SC2336-2SC2336A-2SC2336B
