2PG006 ,Silicon N-channel enhancement IGBTAbsolute Maximum Ratings T = 25°CC 1. GateParameter Symbol Rating Unit 2. CollectorCollector-emitt ..
2PG009 ,Silicon N-channel enhancement IGBTAbsolute Maximum Ratings T = 25°CC Pin NameParameter Symbol Rating Unit 1. Gate 2. CollectorColl ..
2R5TPB1000M , standard products corresponding to the diversification of the needs
2R5TPB1000M , standard products corresponding to the diversification of the needs
2R5TPB330M , standard products corresponding to the diversification of the needs
2R5TPB330M , standard products corresponding to the diversification of the needs
2SC3496A ,Power DeviceFeatures• High-speed switching• High collector-base voltage (Emitter open) VCBO0 to 0.4• Satisfacto ..
2SC3502. ,NPN Epitaxial Planar Silicon Transistors Ultrahigh-Definition CRT Display, Video Output Applications
2SC3503DSTU , NPN Epitaxial Silicon Transistor
2SC3503ESTU , NPN Epitaxial Silicon Transistor
2SC3505 ,TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHINGApplications mg 05:31] ,5
qAdsyrVrV#cu,-9 Switching regulators
_ SAS' Itsf mmm
otMtiethttttt Ult ..
2SC3506 ,Power DeviceAbsolute Maximum Ratings T = 25°C1.1±0.1 0.6±0.2CParameter Symbol Rating UnitCollector-base voltag ..
2PG006
