2PB709ARW ,PNP general purpose transistors
2PB709ASL ,45 V, 100 mA PNP general-purpose transistorsLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
2PB709ASW ,PNP general purpose transistorsAPPLICATIONS3 collector• General purpose switching and amplification.DESCRIPTION3handbook, halfpage ..
2PB710AR ,PNP general purpose transistor
2PC1815GR ,NPN general purpose transistor
2PC1815Y ,NPN general purpose transistor
2SC3419 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SC3420 ,Silicon NPN Power Transistors TO-126 packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC3420 ,Silicon NPN Power Transistors TO-126 packageAPPLICATIONS).75.8gi3.1 10.1hFE = 70 (Min.) (VCE = 2V, IC = 4A)Low Saturation Voltage: VCE (sat) = ..
2SC3421 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC3421. ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS2SC3421TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)AUDIO FREQUENCY POWER AMPLIFIER
2SC3422 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHINGELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2PB709ARW
PNP general purpose transistors
