2PB709ASW ,PNP general purpose transistorsAPPLICATIONS3 collector• General purpose switching and amplification.DESCRIPTION3handbook, halfpage ..
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2SC3421 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC3421. ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS2SC3421TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)AUDIO FREQUENCY POWER AMPLIFIER
2SC3422 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHINGELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC3422 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING2SC3422TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)AUDIO FREQUENCY POWER AMPLIFIER U ..
2SC3422 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHINGapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SC3423 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2PB709AQW-2PB709ASW
PNP general purpose transistors
Philips Semiconductors Product specification
PNP general purpose transistor 2PB709AW
FEATURES High collector current (max. 100 mA) Low collector-emitter saturation voltage (max. 500 mV).
APPLICATIONS General purpose switching and amplification.
DESCRIPTIONPNP transistor in an SC-70 (SOT323) plastic package.
NPN complement: 2PD601AW
MARKING
Note*= p: made in Hong Kong.= t: made in Malaysia.
PINNING
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Note For mounting conditions, see “Thermal considerations and footprint designfor SOT323in the General Partof Data
Handbook SC18”.
Philips Semiconductors Product specification
PNP general purpose transistor 2PB709AW
THERMAL CHARACTERISTICS
Note For mounting conditions, see “Thermal considerations and footprint designfor SOT323in the General Partof Data
Handbook SC18”.
CHARACTERISTICSTamb =25 °C unless otherwise specified.
Note Pulse test: tp≤ 300 μs; δ≤ 0.02.
Philips Semiconductors Product specification
PNP general purpose transistor 2PB709AW
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT323
Philips Semiconductors Product specification
PNP general purpose transistor 2PB709AW
DATA SHEET STATUS
Notes Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL .
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given arein
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device theseorat any other conditions abovethosegivenin the
Characteristics sectionsof the specificationis not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make representationor warranty thatsuch applications willbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonablybe expectedto resultin personal injury. Philips
Semiconductors customers usingor selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the rightto make changes, without notice,in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the useof anyof these products, conveysno licence ortitle
under any patent, copyright, or mask work right to these
products, and makesno representationsor warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Philips Semiconductors Product specification
PNP general purpose transistor 2PB709AW
NOTES
