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2PA1774Q-2PA1774R-2PA1774S
PNP general-purpose transistor
Product profile1.1 General descriptionPNP transistor in a SOT416 (SC-75) plastic package. The NPN complement is 2PC4617.
1.2 Features Low current (max. 150 mA) Low voltage (max. 50V)
1.3 Applications General-purpose switching and amplification in communication, Electronic Data
Processing (EDP) and consumer applications.
Pinning information Ordering information A1774
PNP general-purpose transistor
Rev. 05 — 17 November 2009 Product data sheet
Table 1. Pinning1base
2emitter collector
Table 2. Ordering information2PA1774Q SC-75 plastic surface mounted package; 3 leads SOT416
2PA1774R
2PA1774S
NXP Semiconductors 2PA1774
PNP general-purpose transistor Marking Limiting values[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Thermal characteristics[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Table 3. Marking codes2PA1774Q YQ
2PA1774R YR
2PA1774S YS
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - −60 V
VCEO collector-emitter voltage open base - −50 V
VEBO emitter-base voltage open collector - −6V collector current (DC) - −150 mA
ICM peak collector current - −200 mA
IBM peak base current - −100 mA
Ptot total power dissipation Tamb≤25°C [1] -150 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Table 5. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
[1] --833 K/W
NXP Semiconductors 2PA1774
PNP general-purpose transistor Characteristics[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
Table 6. CharacteristicsTamb = 25 °C unless otherwise specified.
ICBO collector-base
cut-off current =0 A; VCB= −30V - - −100 nA =0 A; VCB= −30V; = 150°C −5 μA
IEBO emitter-base
cut-off current =0 A; VEB= −4V - - −100 nA
hFE DC current gain IC= −1mA; VCE= −6V [1]
2PA1774Q 120 - 270
2PA1774R 180 - 390
2PA1774S 270 - 560
VCEsat collector-emitter
saturation
voltage= −50 mA; = −5mA
[1] -- −200 mV collector
capacitance =ie =0 A;
VCB= −12 V; f=1 MHz 2.2 pF transition
frequency= −2mA;
VCE= −12V; = 100 MHz
[1] 100 --MHz
NXP Semiconductors 2PA1774
PNP general-purpose transistor Package outlineNXP Semiconductors 2PA1774
PNP general-purpose transistor Revision history Table 7. Revision history2PA1774_5 20091117 Product data sheet - 2PA1774_4
Modifications:
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 1 “Package outline SOT416 (SC-75)”: updated
2PA1774_4 20041124 Product data sheet - 2PA1774_3
2PA1774_3 20001212 Product specification - 2PA1774_2
2PA1774_2 19990601 Preliminary specification- 2PA1774_1
2PA1774_1 19970709 Preliminary specification- -
NXP Semiconductors 2PA1774
PNP general-purpose transistor
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Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
