2PA1576R ,PNP general purpose transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
2PA1576S ,PNP general purpose transistorFEATURES PINNING• Low current (max. 100 mA)PIN DESCRIPTION• Low voltage (max. 40 V)1 base• Low coll ..
2PA1774 ,PNP general purpose transistor
2PA1774Q ,PNP general purpose transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
2PA1774Q ,PNP general purpose transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
2PA1774Q ,PNP general purpose transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
2SC3382 ,Low-Noise AF Amp ApplicationsFeatures. Adoption of FEET process. AF amp. Low-noise use( J.. ZSA1391MA1391/2SC3382PNP/ NPN Epitax ..
2SC3383 ,NPN Epitaxial Planar Silicon Transistors AF Amp ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3390 , Silicon NPN Epitaxial
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2SC3391 , Silicon NPN Epitaxial Planar
2PA1576R
PNP general-purpose transistor
Product profile1.1 General descriptionPNP transistor in a SOT323 (SC-70) plastic package. The NPN complement is 2PC4081.
1.2 Features Low current (max. 150 mA) Low voltage (max. 50V) Low collector capacitance (typ. 2.5 pF)
1.3 Applications General-purpose switching and amplification
Pinning information Ordering information A1576
PNP general-purpose transistor
Rev. 06 — 17 November 2009 Product data sheet
Table 1. Pinning1base
2emitter collector
Table 2. Ordering information2PA1576Q SC-70 plastic surface mounted package; 3 leads SOT323
2PA1576R
2PA1576S
NXP Semiconductors 2PA1576
PNP general-purpose transistor Marking[1] * = -: made in Hong Kong
* = t: made in Malaysia
Limiting values[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Thermal characteristics[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Table 3. Marking codes2PA1576Q F*Q
2PA1576R F*R
2PA1576S F*S
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - −60 V
VCEO collector-emitter voltage open base - −50 V
VEBO emitter-base voltage open collector - −6V collector current (DC) - −150 mA
ICM peak collector current - −200 mA
IBM peak base current - −200 mA
Ptot total power dissipation Tamb≤25°C [1] -200 mW
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Table 5. Thermal characteristicsRth(j-a) thermal resistance from
junction to ambient
[1] --625 K/W
NXP Semiconductors 2PA1576
PNP general-purpose transistor Characteristics[1] Pulse test: tp≤ 300 μs; δ≤ 0.02.
Table 6. CharacteristicsTamb = 25 °C unless otherwise specified.
ICBO collector-base
cut-off current =0 A; VCB= −30V - - −100 nA =0 A; VCB= −30V; = 150°C −5 μA
IEBO emitter-base
cut-off current =0 A; VEB= −4V - - −100 nA
hFE DC current gain IC= −1mA; VCE= −6V
2PA1576Q 120 - 270
2PA1576R 180 - 390
2PA1576S 270 - 560
VCEsat collector-emitter
saturation
voltage= −50 mA; = −5mA
[1] -- −500 mV collector
capacitance =ie =0 A;
VCB= −12 V; f=1 MHz
-2.5 3.5 pF transition
frequency= −2mA;
VCE= −12V; = 100 MHz
100 --MHz
NXP Semiconductors 2PA1576
PNP general-purpose transistor Package outlineNXP Semiconductors 2PA1576
PNP general-purpose transistor Revision history Table 7. Revision history2PA1576_6 20091117 Product data sheet - 2PA1576_5
Modifications:
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 1 “Package outline SOT323 (SC-70)”: updated
2PA1576_5 20041124 Product data sheet - 2PA1576_4
2PA1576_4 19990531 Product specification - 2PA1576_3
2PA1576_3 19970328 Objective specification - 2PA1576_2
2PA1576_2 19931213 n.a. - n.a.
NXP Semiconductors 2PA1576
PNP general-purpose transistor
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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent
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Characteristics sections of this document is not implied. Exposure to limiting
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Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
