2N918 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (Tame = 25 ( unless otherwise specified)
Symbol Parameter Test Conditio ..
2N964 , silicon transistors UHF/VHF power transistors
2NU41 ,SUPER FAST RECOVERY RECTIFIER (SWITCHING TYPE POWER SUPPLY APPLICATIONS)APPLICATIONS Unit in mmRepetitive Peak Reverse Voltage
: VRRM = lOOOVAverage Forward Current
..
2P4M ,Opto-Electronic Devices(NEPOC)APPLICATIONS
Electric blanket, Electronic jar, Various temperature con-
trol.
Electric sewin ..
2P4M. ,Opto-Electronic Devices(NEPOC)ELECTRICAL CHARACTERISTICS (Ta=25 0C)
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
U7
Repet ..
2P4M.. ,Opto-Electronic Devices(NEPOC)FEATURES
0 Easy installation by its miniature size and thin electrode
leads.
0 Less holdin ..
2SC3356-T1B-A , NPN Silicon RF Transistor
2SC3356-T1B-A , NPN Silicon RF Transistor
2SC3356-T2B ,For amplify low noise and high frequencyDATA SHEETDATA SHEETSILICON TRANSISTOR2SC3356MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC3357 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDDATA SHEETSILICON TRANSISTOR2SC3357NPN SILICON EPITAXIAL TRANSISTORPOWER MINI MOLDDESCRIPTIO ..
2SC3357-T1 ,For amplify high frequency and low noise.DATA SHEETSILICON TRANSISTOR2SC3357NPN SILICON EPITAXIAL TRANSISTORPOWER MINI MOLDDESCRIPTIO ..
2SC3357-T2 ,For amplify high frequency and low noise.DATA SHEETSILICON TRANSISTOR2SC3357NPN SILICON EPITAXIAL TRANSISTORPOWER MINI MOLDDESCRIPTIO ..
2N918
HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS
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BFX73-2N918
2N3600
S ti S-THOMSON
HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS
The BFX73, 2N918 and 2N3600 are silicon planar
epitaxial NPN transistors in Jedec TO-72 metal
They are designed for low-noise VHF amplifiers, os-
cillators up to 1 GHz, non-neutralized IF amplifiers
and non-saturating circuits with rise and fall times of
less than 2.5 ns.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
cho Collector-base Voltage (IE = 0) 30 V
cho Collector-emitter Voltage (Ia = 0) 15 V
Verso Emitter-base Voltage (lo = 0) 3 V
Ic Collector Current 50 mA
Ptot Total Power Dissipation at Tamb s 25 °C 200 mW
Tatq. T] Storage and Junction Temperature - 65 to 200 'ti)
November 1988 1/5
This Material Copyrighted By Its Respective Manufacturer
BFX73-2N91 8-2N3600
S G S-THOMSON
30E 1) III 'Riy3iil37 I:ll33rlnnl:l D © T-31-15
THERMAL DATA
Rm 1.033., Thermal Resistance Junction-case Max 584 "C/W
Rm j-amb Thermal Resistance Junction-ambient Max 875 "C/IN
ELECTRICAL CHARACTERISTICS (Tamb = 25 'C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
logo Collector Cutoff Current Vca = 15 V 10 nA
(IE=0) Vcrs--15V Tamb=150 T 1 yA
V(Ba)cso Collector-base Breakdown -
Voltage (IE = 0) '0 --.1 ttA 30 V
Vcao (stts) Collector-emitter Sustaining -
Voltage (ls = 0) Ito "3 mA 15 V
V(BR) Ego Emitter-base Breakdown -
Voltage (Its = 0) IE =10 pA 3 V
chsat) Collector-emitter Saturation I =10 mA I _1 m A 0 4 V
Voltage 0 B - .
VBE(sa1) Base-emitter Saturation lo = 10 mA la = 1 mA 1 V
Voltage
hFE DC Current Gain 1c = 3 mA VCE =1 V
for 2N918/BFX73 20 50
for 2N3600 20 150
fr Transition Frequency for 2N91 8/BFX73
Its =4 mA Vce =10V
f = 100 MHz 600 900 MHz
for 2N3600
'0 =6 mA VCE =6 V
f = 100 MHz 850 1500 MHz
CEBO Emitter-base Capacitance IO = O Vee = 0.5 V
f =1 MHz
for 2N918/BFX73 2 pF
for 2N3600 1.4 pF
Corso Collector-base Capacitance IE = 0 f = 1 MHz
(for 2N918/BFX73 only) VCE = 0 V 1.8 3 pF
VCE = 10 V 1 1.7 pF
tho Reverse Capacitance lo = 0 VCB = 10 V
(for 2N3600 only) f=1 MHz 1 pF
NF Noise Figure IO = 1.5 mA VCE = 6 V
R9 =509 f=200 MHz
0 for 2N3600 4.5 dB
Io--1mA ch=6V
Ro--400nf--a60MHz
for 2N918/BFX73 6 dB
for 2N3600 3 dB
Gpe Power Gain R9 = 50 n f = 200 MHz
for 2N91 8/BFX73
Ic=6mA VCE=12V 15 21 dB
for 2N3600
|c=5mA VOE=6V 17 24 dB
I See test circuits.
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This Material Copyrighted By Its Respective Manufacturer
