2N720 ,HIGH VOLTAGE GENERAL PURPOSEapplications.TO-18INTERNAL SCHEMATIC DIAGRAMABSOLUTEMAXIMUM RATINGSSymbol Parameter Value UnitV Col ..
2N7218 ,HEXFET TRANSISTORData Sheet No. PD-9.4860
INTERNATIONAL RECTIFIER
REPETITIVE AVALANCHE RATED AND dv/dt RATED
..
2N914 , Small Signal Transistors
2N914 , Small Signal Transistors
2N918 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (Tame = 25 ( unless otherwise specified)
Symbol Parameter Test Conditio ..
2N964 , silicon transistors UHF/VHF power transistors
2SC3356-T1B ,For amplify low noise and high frequencyDATA SHEETDATA SHEETSILICON TRANSISTOR2SC3356MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC3356-T1B-A , NPN Silicon RF Transistor
2SC3356-T1B-A , NPN Silicon RF Transistor
2SC3356-T2B ,For amplify low noise and high frequencyDATA SHEETDATA SHEETSILICON TRANSISTOR2SC3356MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC3357 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDDATA SHEETSILICON TRANSISTOR2SC3357NPN SILICON EPITAXIAL TRANSISTORPOWER MINI MOLDDESCRIPTIO ..
2SC3357-T1 ,For amplify high frequency and low noise.DATA SHEETSILICON TRANSISTOR2SC3357NPN SILICON EPITAXIAL TRANSISTORPOWER MINI MOLDDESCRIPTIO ..
2N720
HIGH VOLTAGE GENERAL PURPOSE
2N7 20AHIGH VOLTAGE GENERAL PURPOSE
DESCRIPTIONThe 2N720Aisa silicon planar epitaxial NPN tran-
sistorin Jedec TO-18 metal case.Itis suitablefora
wide varietyof amplifier and switching applications.
ABSOLUTEMAXIMUM RATINGS
Symbol Parameter Value UnitVCBO Collector-base Voltage(IE =0) 120 V
VCEO Collector–emitter Voltage(IR =0) 80 V
VEBO Emitter–base Voltage(IC =0) 7 V Collector Current 500 mA
Ptot Total Power Dissipationat Tamb≤25°C
TO-18
INTERNAL SCHEMATIC DIAGRAM
ELECTRICAL CHARACTERISTICS(Tamb =25°C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. UnitICBO Collector Cutoff Current
(IE =0)
VCB =90V 10 nA
V(BR)CBO Collector–base Breakdown
Voltage
(IE =0) =100μA 120 V
V(BR)CEO* Collector–emitter Breakdown
Voltage
(IB =0) =30 mA 80 V
V(BR)EBO Emitter–base Breakdown
Voltage
(IE =0) =100 μA7 V
IEBO Emitter Cuttoff Current
(IE =0)
VEB =5V 10 nA
VCE(sat)* Collector–emitter Saturation
Voltage =50 mA =150 mA =5 mA =15 mA
VBE(sat)* Base–emitter Saturation
Voltage =50 mA =150 mA =5 mA =15 mA
hFE* DC Current Gain IC =100μA =10 mA =150 mA
VCE =10V
VCE =10V
VCE =10V 120
hfe High Frequency Current
Gain =50 mA20 MHz
VCE=10V 2.5 –
CCBO Collector–base Capacitance IE =0=1 MHz
VCB =10V 15 pF
CEBO Emitter–base Capacitance IC =0=1 MHz
VEB= 0.5V 85 pF Pulsed: pulse duration= 300μs, duty cycle=1%.
THERMAL DATARth j-case
Rth j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
°C/W
°C/W
2N720A
DIM. inch
MIN. TYP. MAX. MIN. TYP. MAX. 12.7 0.500 0.49 0.019 5.3 0.208 4.9 0.193 5.8 0.228 2.54 0.100 1.2 0.047 1.16 0.045
L45o 45o
E
TO-18 MECHANICAL DATA
2N720A
Information furnishedis believedtobe accurate and reliable. However, SGS-THOMSON Microelectronics assumesno responsabilityforthe
consequencesof useof such informationnor forany infringementof patentsor other rightsof third partieswhich mayresults fromits use.No
license isgrantedby implication orotherwise under anypatentor patentrights ofSGS-THOMSON Microelectronics.Specificationsmentionedthis publicationare subjectto change without notice. This publicationsupersedesand replacesall information previously supplied.
SGS-THOMSON Microelectronicsproductsarenot authorizedforuse ascriticalcomponents inlife supportdevices orsystemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics. 1994 SGS-THOMSON Microelectronics-All Rights Reserved
SGS-THOMSON Microelectronics GROUPOF COMPANIES
2N720A
This datasheet has been :
www.ic-phoenix.com
Datasheets for electronic components.
