2N7053 ,NPN Darlington Transistorapplications requiring extremely highgain at collector currents to 1.0 A and high breakdown voltage ..
2N706 ,NPN high speed logic switch.FAIRCHILD SEMICONDUCTOR ELI PEIBHEHE'?” DDE'éI-IBE Cl I
3469674 FAIRCHILD SEMICONDUCTOR 840 2748 ..
2N709 ,Conductor Products, Inc. - N-P-N EPITAXIAL PLANAR SILICON TRANSSTOR
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2N718A ,GENERAL PURPOSE TRANSISTOR (NPN SILICON)
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2SC3355L-T92-K , HIGH FREQUENCY LOW NOISE AMPLIFIER
2SC3356-T1B ,For amplify low noise and high frequencyDATA SHEETDATA SHEETSILICON TRANSISTOR2SC3356MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC3356-T1B-A , NPN Silicon RF Transistor
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2SC3356-T2B ,For amplify low noise and high frequencyDATA SHEETDATA SHEETSILICON TRANSISTOR2SC3356MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC3357 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDDATA SHEETSILICON TRANSISTOR2SC3357NPN SILICON EPITAXIAL TRANSISTORPOWER MINI MOLDDESCRIPTIO ..
2N7053
NPN Darlington Transistor
2N7052 / 2N7053 / NZT7053 Discrete POWER & Signal Technologies 2N7052 2N7053 NZT7053 C E C TO-92 C B B TO-226 C E SOT-223 B E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 100 V CEO V Collector-Base Voltage 100 V CBO V Emitter-Base Voltage 12 V EBO I Collector Current - Continuous 1.5 A C Operating and Storage Junction Temperature Range -55 to +150 C T , T ° J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units 2N7052 2N7053 *NZT7053 P Total Device Dissipation 625 1,000 1,000 mW D 5.0 8.0 8.0 Derate above 25°C mW/°C R Thermal Resistance, Junction to Case 83.3 125 °C/W θJC Thermal Resistance, Junction to Ambient 200 50 125 R °C/W θJA 2 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm . ã 1997
